FGA25N120ANTD

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FGA25N120ANTD

onsemi NPTTIGBT TO3PN 25A 1200V

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  • Mfr. Parte #FGA25N120ANTD
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Especificaciones

Packaging Tube
Standard Pack Qty 450

Descripción general

Description

The FGA25N120ANTD is a high-performance power transistor, specifically a N-channel MOSFET, designed for applications in power electronics. It is commonly used in switch-mode power supplies, motor drives, and industrial automation. The device features a voltage rating of 1200V and a current rating of 25A, providing high efficiency and reliability in high-voltage applications.
Key attributes include low on-state resistance, fast switching speeds, and thermal stability, making it suitable for demanding operational environments. The FGA25N120ANTD is typically housed in a TO-247 package, allowing for efficient heat dissipation. This ensures optimal performance and longevity in various applications.
Overall, the FGA25N120ANTD is recognized for its robustness and efficiency in controlling electrical power, making it a valuable component in both consumer and industrial electronic systems.

Features

The FGA25N120ANTD is a high-voltage, N-channel insulated gate bipolar transistor (IGBT) designed for various industrial applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 25A, allowing for robust performance in power conversion.
3. Low Switching Losses: Optimized for efficiency in switching applications.
4. Fast Switching Speed: Enhances performance in PWM (Pulse Width Modulation) drive circuits.
5. Thermal Stability: Offers good thermal performance, enabling operation in demanding environments.
6. Robust Package: Housed in a TO-247 package, facilitating better heat dissipation and ease of mounting.
7. Gate Threshold Voltage: Provides a suitable range for reliable operation and control.
8. Applications: Commonly used in motor drives, power inverters, and other power electronic circuits.
These attributes make the FGA25N120ANTD ideal for applications requiring high efficiency and reliable operation in a compact and thermally efficient package.

Package

The FGA25N120ANTD is packaged in a TO-247 form factor, which is commonly used for high-power semiconductor devices. This package provides good thermal performance and is suitable for applications requiring high voltage and current handling.

Pinout

The FGA25N120ANTD is a silicon carbide (SiC) MOSFET designed for high-voltage applications, specifically with a voltage rating of 1200V and a current rating of 25A. It typically comes in a TO-247 package, which has a pin count of 3.
The functions of the pins are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A positive voltage applied to this pin turns the device on, allowing current to flow from drain to source.
2. Drain (D): This is the terminal where the output current flows out of the MOSFET. It is connected to the load in the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the circuit and serves as the return path for the current flowing through the device.
This configuration allows the FGA25N120ANTD to be used in various applications, including power supplies, motor drives, and renewable energy systems.

Manufacturer

The FGA25N120ANTD is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of innovative semiconductor solutions, including power management, analog, logic, and sensor products. They serve various industries such as automotive, industrial, communications, and consumer electronics. The company focuses on energy-efficient innovations and sustainable practices, aiming to create technologies that help reduce energy consumption and enhance performance in electronic devices.

Application

The FGA25N120ANTD is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) typically used in applications such as motor drives, power inverters, induction heating, renewable energy systems (like solar inverters), and uninterruptible power supplies (UPS). Its ability to handle high voltage and current makes it suitable for industrial and automotive applications as well.

Equivalent

The FGA25N120ANTD is an N-channel MOSFET. Equivalent products include the STP25NM120, IRF250, and MTP25N120E. Ensure to check the specific ratings and characteristics like voltage, current, and RDS(on) for compatibility in your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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