FDV305N

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FDV305N

SMALL SIGNAL FIELD-EFFECT TRANSI

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Especificaciones

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 900mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 220mOhm @ 900mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 1.5 nC @ 4.5 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 109 pF @ 10 V
PowerDissipation(Max) 350mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Descripción general

Description

FDV305N is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), used primarily in electronic circuits for switching and amplification. This MOSFET features a low on-resistance, making it efficient for power applications, such as in power supplies, motor control, and other high-current applications.
Key specifications often include a maximum drain-source voltage (VDS) rating and a maximum continuous drain current (ID), which determine its operational limits. The FDV305N is typically housed in a standard package, allowing for easy integration into circuit designs.
Its characteristics make it suitable for various applications, including RF amplifiers and power management systems, where efficiency and thermal performance are critical. Understanding these parameters is essential for effective circuit design and ensuring reliable performance in electronic applications.

Features

The FDV305N is an N-channel MOSFET designed for low voltage and high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 4.6A, enabling it to handle significant loads.
3. Low On-Resistance: With a low R_DS(on) value (typically around 0.025 ohms), it minimizes power loss and enhances efficiency during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1 to 2V, allowing it to be driven by low-voltage control signals.
5. Fast Switching Speed: The FDV305N supports high-speed switching, making it ideal for applications like power management, motor control, and inverters.
6. Compact Package: It is available in a compact SOT-23 package, facilitating space-saving designs in PCB layouts.
These features make the FDV305N a versatile choice for various electronic applications.

Package

The FDV305N is typically packaged in a SOT-23 surface-mount package. This compact package is designed for efficient thermal performance and space-saving applications in electronic circuits.

Pinout

The FDV305N is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin creates an electric field that allows current to flow between the Drain and Source pins.

2. Drain (D): This pin is where the current flows out of the MOSFET. It connects to the load in a circuit.

3. Source (S): This pin is where the current enters the MOSFET from the power supply or ground.
The FDV305N is commonly used in low power switching applications, and its small size makes it suitable for use in compact electronic devices.

Manufacturer

The FDV305N is manufactured by Fairchild Semiconductor, which is a well-known company specializing in the design and production of semiconductors. Fairchild Semiconductor, founded in 1957, is recognized for its innovations in the field of power management, analog, and mixed-signal devices. The company primarily serves various industries, including computing, automotive, and consumer electronics, providing high-performance solutions that enhance energy efficiency and reliability. In 2016, Fairchild was acquired by ON Semiconductor, further expanding its reach and capabilities in the semiconductor market.

Application

The FDV305N is a N-channel MOSFET commonly used in low-voltage applications, such as switching power supplies, LED drivers, and motor control circuits. It is suitable for amplifying signals in analog circuits and acts as a switch in digital applications. Its low on-resistance and fast switching speeds make it ideal for battery-operated devices and power management systems.

Equivalent

The FDV305N is a N-channel MOSFET. Equivalent products include the 2N7000, BS170, and IRF510. For similar specifications, consider the BSS138 and SI2302. Always check the datasheets for voltage, current ratings, and package types to ensure compatibility with your application.

Envío

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UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

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