FDV303N

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FDV303N

MOSFET N-CH 25V 680MA SOT23

  • Fabricante
  • Mfr. Parte #FDV303N
  • Paquete SOT23-3
  • Hoja de datos
  • En stock7272

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 680mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.7V, 4.5V
RdsOn(Max)@IdVgs 450mOhm @ 500mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 2.3 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 50 pF @ 10 V
PowerDissipation(Max) 350mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Descripción general

Description

FDV303N is a component typically used in electronic circuits, specifically as a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for switching and amplification applications. Key features often include low on-resistance, high-speed operation, and the ability to handle significant power levels, making it suitable for various applications like power management, motor control, and signal amplification.
In practical use, FDV303N can be found in consumer electronics, automotive systems, and industrial equipment, where efficient switching and power regulation are crucial. Its compact size and effectiveness in low-voltage applications make it popular in modern circuit designs.
When working with FDV303N, considerations include gate voltage levels, thermal management, and the specific parameters outlined in its datasheet to ensure optimal performance.

Features

The FDV303N is a N-channel MOSFET designed for low-voltage applications with several notable features:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 30V.
2. Current Rating: The device can handle continuous drain current (I_D) around 7A.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) value, usually around 0.1 ohms, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, facilitating easy control with standard logic levels.
5. Package Type: Available in a compact SMD package, making it suitable for space-constrained applications.
6. Switching Speed: The FDV303N features fast switching capabilities, ideal for high-frequency applications.
7. Application Range: Commonly used in power management, load switching, and DC-DC converters.
These features make the FDV303N a versatile choice for various electronic circuits requiring efficient power control.

Package

The FDV303N is typically packaged in a surface-mount SOT-23 package. This compact package design is commonly used for its low profile and ease of integration in electronic circuits.

Pinout

The FDV303N is a N-channel MOSFET with a total of 4 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current enters the MOSFET when it is on.
3. Source (S): This pin is where the current exits the MOSFET. When the device is activated via the gate, current flows from the drain to the source.
4. Body (B): This pin is internally connected to the source and is often not separately connected in typical circuits.
The FDV303N is used in various applications for switching and amplification due to its low on-resistance and efficient operation.

Manufacturer

The FDV303N is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild was known for its production of a wide range of semiconductor products, including transistors, diodes, and integrated circuits. The company specialized in devices for various applications, such as power management, signal switching, and digital logic, serving markets like automotive, industrial, and consumer electronics. Fairchild Semiconductor was recognized for its innovation in the semiconductor space and played a significant role in the development of the electronics industry. Now under ON Semiconductor, the legacy continues with an expanded portfolio that focuses on energy-efficient solutions and advanced semiconductor technologies.

Application

The FDV303N is a dual N-channel MOSFET used in various applications, including low-power switching, signal processing, and analog switching in consumer electronics. Its compact size makes it suitable for portable devices, while its low gate threshold voltage is ideal for battery-operated applications. It is also utilized in automated systems, power management circuits, and LED drivers.

Equivalent

The FDV303N is a dual N-channel MOSFET used in low-voltage applications. Equivalent products include the 2N7000, BS170, and BSS138. Additional alternatives could be the MMBF170 or the SI2301. Always verify specifications such as voltage, current, and package type when selecting a substitute.

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