FDT3N40TF

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FDT3N40TF

MOSFET N-CH 400V 2A SOT223-4

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  • Mfr. Parte #FDT3N40TF
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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series UniFET™
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.4Ohm @ 1A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 6 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 225 pF @ 25 V
PowerDissipation(Max) 2W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223-4

Descripción general

Description

FDT3N40TF is an N-channel enhancement-mode power MOSFET used as a high-voltage switch in power electronics (offline SMPS, motor drives, inverters, etc.). The exact ratings vary by vendor, but parts with a 3N40 designation are typically intended for around 400 V blocking and a few amperes of drain current, with low-to-moderate Rds(on) and robust switching/avalanche behavior.
Key points:
- Package options: common power packages (TO‑220/TO‑220F, D²PAK, etc.) with a tab tied to Drain.
- Gate drive: usually Vgs up to ±10 V (some variants may be logic-level).
- Pinout: depends on package (e.g., TO‑220 style is generally Gate, Drain (tab), Source); verify in the specific datasheet.
- Typical applications: high-voltage switching in dc-dc converters, power supplies, inverters, and motor controllers.
- Important specs to check in the datasheet: Vds, Id, Rds(on) at your gate voltage, Vgs(th), Qgs/Qgd, total gate charge, switching speed, thermal resistance, and avalanche rating.
If you share the manufacturer or a datasheet link, I’ll give precise ratings, pinout, and recommended operating conditions.

Features

FDT3N40TF features:
- N-channel enhancement-mode MOSFET
- VDS: 400 V
- Continuous drain current (ID): ~3 A
- RDS(on): typically a few ohms (≈2–4 Ω) at VGS = 10 V
- Gate threshold (VGS(th)): ~2–4 V
- Suitable for fast, high-voltage switching applications
- Avalanche ruggedness for reliability in switching power supplies
- Packaging options: through-hole TO-220F or surface-mount D2PAK variants
- Maximum junction temperature (TJ max): ~150°C
- RoHS compliant
- Common applications: high-voltage switching in SMPS, isolated power supplies, motor drivers
Note: For exact parameters (RDS(on), ID, packaging) consult the latest datasheet.

Pinout

FDT3N40TF is a single N‑channel power MOSFET with three electrical pins: Gate (G) — control terminal that turns the device on/off; Drain (D) — high‑voltage input/load terminal; Source (S) — return/reference terminal. The metal tab/case is typically tied to the Drain.

Application

FDT3N40TF is a high‑voltage N‑channel power MOSFET used for switching HV power electronics. Typical applications:
- Offline SMPS front ends (flyback/buck)
- Active PFC and HV DC‑DC stages
- Motor drives and inverter circuits
- Solar inverters, UPS, grid‑tie, and power management
- Automotive/industrial HV power supplies (charging and conditioning)

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