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FDS8958B
MOSFET N/P-CH 30V 6.4/4.5A 8SOIC
- Fabricante
- Mfr. Parte #FDS8958B
- Paquete SOIC-8
- Hoja de datos FDS8958B DataSheet
- En stock6624
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Garantía de 365 días
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 6.4A, 4.5A |
| RdsOn(Max)@IdVgs | 26mOhm @ 6.4A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 540pF @ 15V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Descripción general
Description
Key specifications include a maximum V_DS rating of 30V and a continuous drain current rating of up to 40A at room temperature. Its compact package design allows for ease of integration into circuit boards, while its thermal performance ensures reliable operation under demanding conditions.
FDS8958B is often used in automotive, industrial, and consumer electronics applications where efficient switching and thermal management are critical. Overall, it is a versatile component that supports the growing demand for efficient power solutions in modern electronics.
Features
1. Low On-Resistance: Provides efficient performance with a low R_DS(on) value, enhancing power efficiency.
2. High Current Capability: Supports high continuous drain current, suitable for demanding applications.
3. Low Gate Charge: Features a low gate charge (Q_g), facilitating faster switching speeds and reducing driver power consumption.
4. Thermal Performance: Designed with a compact package that aids in effective thermal management.
5. Wide Voltage Range: Operates within a broad range of drain-source voltages, making it versatile for various designs.
6. High Reliability: Built to ensure durability and reliability in various operating environments.
7. RoHS Compliant: Meets environmental standards, appealing for environmentally-conscious designs.
These features make the FDS8958B suitable for applications in computing, telecommunications, and consumer electronics.
Package
Pinout
1. Gate (G): Controls the MOSFET operation; applies voltage to turn it on/off.
2. Source (S): Connects to the ground or lower potential side in the circuit.
3. Drain (D): Connects to the load or higher potential side; conducts current when the gate is activated.
4. Body Diode: Integrated with the MOSFET, allows reverse current flow when the MOSFET is off.
The specific pin configuration includes two sets of gate, source, and drain connections for each MOSFET, making it suitable for high-efficiency switching applications, such as in power management and DC-DC converters.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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