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FDS8958A
POWER FIELD-EFFECT TRANSISTOR, 7
- Fabricante
- Mfr. Parte #FDS8958A
- Paquete SOIC-8
- Hoja de datos FDS8958A DataSheet
- En stock2431
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Especificaciones
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 7A, 5A |
| RdsOn(Max)@IdVgs | 28mOhm @ 7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 575pF @ 15V |
| Power-Max | 900mW |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Descripción general
Description
The FDS8958A is housed in a compact package, which aids in space-saving designs. Its fast switching speed and low gate charge facilitate minimal power loss during operation. Furthermore, the MOSFET is characterized by high thermal performance, allowing for reliable operation over a range of temperatures.
Overall, the FDS8958A is favored in various electronic designs for its efficiency, thermal management, and compact size, making it an essential component in modern power electronics.
Features
1. Low On-Resistance: It offers a low R_DS(on), which minimizes power loss and improves efficiency in applications such as power supplies and battery management systems.
2. High-Speed Switching: The device supports fast switching speeds, making it suitable for high-frequency applications.
3. Enhanced Thermal Performance: It has a robust thermal resistance, allowing it to operate efficiently at elevated temperatures.
4. Low Gate Charge: Reduced gate charge improves switching performance and reduces drive power requirements.
5. Dual Configuration: The package contains two MOSFETs, enabling compact designs and facilitating parallel configurations for higher current applications.
6. Compact Package: Available in a small footprint, which is ideal for space-constrained applications.
These features make the FDS8958A suitable for use in DC-DC converters, motor controls, and other power switching applications.
Package
Pinout
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Source 1 (S1): Connects to the source of the first N-channel MOSFET.
3. Drain 1 (D1): Connects to the drain of the first N-channel MOSFET.
4. Source 2 (S2): Connects to the source of the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the drain of the second N-channel MOSFET.
6. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
7. Common Source (CS): Used for the common source connection.
8. NC (No Connection): Not connected internally, can be left floating.
This device is typically used for load switching and power management applications due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
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2. Tarjeta de crédito/débito
3. Transferencia bancaria
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