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FDS8884
MOSFET N-CH 30V 8.5A 8SOIC
- Fabricante
- Mfr. Parte #FDS8884
- Paquete
- Hoja de datos FDS8884 DataSheet
- En stock5158
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Especificaciones
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 8.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 23mOhm @ 8.5A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 635 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
Descripción general
Description
Features
1. Low On-Resistance: It offers low RDS(on) values, which minimizes power loss and improves efficiency in switching applications.
2. High Speed: The device supports fast switching speeds, making it suitable for high-frequency operations.
3. Compact Package: Typically available in a small surface-mount package, allowing for space-efficient designs.
4. High Thermal Performance: Designed to handle higher thermal loads, ensuring reliability in various operating conditions.
5. Gate Threshold Voltage: Compatible with low-voltage drive signals, enhancing flexibility in circuit designs.
6. Integrated Protection: May include features like ESD protection, improving robustness against transient voltage spikes.
These attributes make the FDS8884 suitable for applications in power management, DC-DC converters, and motor drivers.
Package
Pinout
The pin configuration is as follows:
1. Gate 1: Controls the switching of the first N-channel MOSFET.
2. Source 1: The source terminal of the first N-channel MOSFET.
3. Drain 1: The drain terminal of the first N-channel MOSFET.
4. Gate 2: Controls the switching of the second N-channel MOSFET.
5. Source 2: The source terminal of the second N-channel MOSFET.
6. Drain 2: The drain terminal of the second N-channel MOSFET.
7. Drain 3: (Optional) Can be used for external connections.
8. Source 3: (Optional) Can be used for external connections.
These MOSFETs provide low on-resistance and fast switching capabilities, making them ideal for various power applications.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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