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FDS6930B
MOSFET 2N-CH 30V 5.5A 8SOIC
- Fabricante
- Mfr. Parte #FDS6930B
- Paquete 8-SOIC (0.154, 3.90mm Width)
- Hoja de datos FDS6930B DataSheet
- En stock8491
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
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Especificaciones
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 5.5A |
| RdsOn(Max)@IdVgs | 38mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.8nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 412pF @ 15V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Descripción general
Description
Features
1. Low On-Resistance: Ensures minimal power loss during operation, enhancing efficiency.
2. High-Speed Switching: Provides fast switching capabilities, suitable for applications like DC-DC converters and load switches.
3. Voltage Rating: Typically supports a drain-source voltage of up to 30V, making it versatile for various low-voltage applications.
4. Compact Package: Often available in a surface-mount package (e.g., SO-8), facilitating space-saving designs.
5. Thermal Performance: Designed to handle significant power dissipation, improving reliability in demanding environments.
6. Low Gate Charge: Offers reduced drive power for lower heat generation in the gate drive circuit.
These features make the FDS6930B ideal for consumer electronics, automotive systems, and other electronic devices requiring efficient power switching.
Package
Pinout
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - Source terminal for the first N-channel MOSFET.
4. Source2 (S2) - Source terminal for the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Gate2 (G2) - Controls the second N-channel MOSFET.
7. Drain1 (D1) - Duplicate pin for the first MOSFET's Drain.
8. Source2 (S2) - Duplicate pin for the second MOSFET's Source.
The FDS6930B is commonly used in applications such as power management, electronic switching, and load driving due to its fast switching speeds and low on-resistance.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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