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FDS6576
MOSFET P-CH 20V 11A 8SOIC
- Fabricante
- Mfr. Parte #FDS6576
- Paquete
- Hoja de datos
- En stock9907
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Especificaciones
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 4044 pF @ 10 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS65 |
Descripción general
Description
Features
1. Low On-Resistance (R_DS(on)): It offers low resistance, leading to lower power losses and improved efficiency.
2. High-Speed Switching: Suitable for fast switching applications, enhancing performance in power supplies and converters.
3. Compact Package: Typically available in a surface-mount package, facilitating space-saving designs.
4. Thermal Performance: Designed to handle higher temperatures, ensuring reliability in demanding environments.
5. Gate Threshold Voltage: Allows for optimal drive voltage flexibility, compatible with various control logic levels.
6. Integrated Protection: Some variants may include features like gate protection to enhance durability.
Overall, the FDS6576 is ideal for use in consumer electronics, automotive applications, and industrial equipment where efficiency and compactness are crucial.
Package
Pinout
Pin Configuration:
1. Gate 1: Controls the first N-channel MOSFET.
2. Source 1: Source terminal for the first N-channel MOSFET.
3. Drain 1: Drain terminal for the first N-channel MOSFET.
4. Source 2: Source terminal for the second N-channel MOSFET.
5. Gate 2: Controls the second N-channel MOSFET.
6. Drain 2: Drain terminal for the second N-channel MOSFET.
7. N/C: No connection (not used).
8. N/C: No connection (not used).
Function: The FDS6576 is designed for applications requiring low on-resistance and high-speed switching, making it suitable for load switching, DC-DC converters, and other power management systems.
Manufacturer
Application
Equivalent
1. BSS138 - a small signal N-channel MOSFET.
2. SI2301 - a low RDS(on) N-channel MOSFET.
3. IRF3708 - a higher power rating MOSFET.
4. FDS6680 - similar specifications in a different package.
Always check the datasheets for specific parameters to ensure compatibility with your application.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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