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FDS6575
MOSFET P-CH 20V 10A 8SOIC
- Fabricante
- Mfr. Parte #FDS6575
- Paquete
- Hoja de datos FDS6575 DataSheet
- En stock21221
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Especificaciones
| Series | PowerTrench® |
| Part Status | Obsolete |
| Base Product Number | FDS65 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 4951 pF @ 10 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Descripción general
Description
Features
1. Voltage Rating: Typically supports a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents (Id) of up to 60A, which allows for robust performance in high-current scenarios.
3. On-Resistance (Rds(on)): Offers low on-resistance, typically around 8 mΩ, which enhances efficiency by minimizing power losses during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage, enabling easy drive with standard logic levels.
5. Thermal Performance: Designed with good thermal characteristics, enabling operation in high-temperature environments.
6. Package: Usually available in a TO-220 or similar package, facilitating effective heat dissipation and ease of mounting.
Overall, the FDS6575 is ideal for applications such as DC-DC converters, motor drivers, and power management systems.
Package
Pinout
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Drain 1 (D1): The drain terminal of the first N-channel MOSFET.
3. Source 1 (S1): The source terminal of the first N-channel MOSFET.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Drain 2 (D2): The drain terminal of the second N-channel MOSFET.
6. Source 2 (S2): The source terminal of the second N-channel MOSFET.
7. Source (common): This pin is often used as a common source for both MOSFETs.
8. Drain (common): This pin is often used as a common drain for both MOSFETs.
The FDS6575 is typically used in applications such as power management, switching regulators, and other circuits requiring efficient switching.
Manufacturer
Application
Equivalent
1. BSS138
2. SI2302
3. AO3400
4. NTD2955
5. IRF3708
Always verify compatibility with specifications like voltage, current, and RDS(on) before substitution.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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