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FDS6294
MOSFET N-CH 30V 13A 8SOIC
- Fabricante
- Mfr. Parte #FDS6294
- Paquete
- Hoja de datos FDS6294 DataSheet
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Especificaciones
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1205 pF @ 15 V |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS62 |
Descripción general
Description
Features
1. Low RDS(on): It offers low on-resistance, minimizing power loss and improving thermal performance.
2. High Speed Switching: Suitable for fast switching applications, enhancing efficiency in DC-DC converters.
3. Compact Package: Typically available in a small surface-mount package, optimizing PCB space.
4. Wide Voltage Range: Designed to operate effectively over a broad voltage range, making it versatile for various applications.
5. Thermal Performance: Incorporates a low thermal resistance design, aiding in effective heat dissipation during operation.
6. High Current Capability: Can handle substantial continuous current loads, beneficial for high-performance applications.
These features make the FDS6294 ideal for applications like power supplies, battery management systems, and other automotive or industrial electronic devices.
Package
Pinout
Pin Configuration and Functions:
1. Gate 1 (G1): Gate of the first N-channel MOSFET.
2. Drain 1 (D1): Drain of the first N-channel MOSFET.
3. Source 1 (S1): Source of the first N-channel MOSFET.
4. Source 2 (S2): Source of the second N-channel MOSFET.
5. Drain 2 (D2): Drain of the second N-channel MOSFET.
6. Gate 2 (G2): Gate of the second N-channel MOSFET.
7. Drain 3 (D3): Not typically connected; may serve as a layout pin.
8. Source 3 (S3): Not typically connected; may serve as a layout pin.
The device is commonly used in power management applications, such as synchronous rectification and load switching.
Manufacturer
ON Semiconductor, the parent company, focuses on delivering energy-efficient solutions, including sensors, power management, and connectivity products, catering to industries such as automotive, industrial, and consumer electronics.
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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