FDP61N20

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FDP61N20

POWER FIELD-EFFECT TRANSISTOR, 6

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Especificaciones

Package Bulk
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 61A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 41mOhm @ 30.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 75 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 3380 pF @ 25 V
PowerDissipation(Max) 417W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Descripción general

Description

FDP61N20 is a powerful N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications in power electronics. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 61A, making it suitable for switching and amplifying applications in power supplies, motor control, and automotive systems.
With a low on-resistance (R_DS(on)), typically around 0.06 ohms, FDP61N20 ensures efficient conduction, reducing power loss and heat generation during operation. Its fast switching capabilities enable high-frequency applications, improving overall system efficiency. The device is housed in a TO-220 package, which facilitates effective thermal dissipation.
FDP61N20 is ideal for designs requiring robust performance and reliability, such as in DC-DC converters, inverters, and other power management systems. Its combination of high voltage, current handling, and efficiency makes it a popular choice among engineers working in the field of power electronics.

Features

The FDP61N20 is a high-performance N-channel MOSFET designed for a variety of applications including power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 200V, allowing it to handle high voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 61A, suitable for high current applications.
3. R_DS(on): Low on-resistance (typically around 0.065 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) ensures efficient switching performance.
5. Fast Switching: Designed for fast switching speeds, making it ideal for high-frequency applications.
6. Thermal Performance: Good thermal stability and performance, with the ability to dissipate heat effectively.
7. Package Type: Available in TO-220 and DPAK packages, providing flexibility in design and heat dissipation.
These features make the FDP61N20 a robust choice for applications in power supplies, DC-DC converters, and motor drives.

Package

The FDP61N20 is typically packaged in a TO-220 form factor, which is a popular package type for power MOSFETs. This type of packaging allows for efficient heat dissipation and easy mounting on heatsinks for high-power applications.

Pinout

The FDP61N20 is an N-channel MOSFET designed for power applications. It features a TO-220 package with a pin count of three.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.

2. Drain (D): The drain is the terminal through which the current leaves the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the current enters the MOSFET.
The FDP61N20 is characterized by a maximum drain-source voltage (V_DS) of 200V and a maximum continuous drain current (I_D) of 61A, making it suitable for high-power applications such as switching power supplies and motor control.

Manufacturer

The FDP61N20 is manufactured by Fairchild Semiconductor, a company that specializes in semiconductor solutions. Fairchild, now part of ON Semiconductor, is known for its innovation in power management, analog, and discrete devices, catering to various industries such as automotive, industrial, and consumer electronics. The FDP61N20 is a N-channel MOSFET, widely used for switching and amplification purposes in electronic circuits.

Application

The FDP61N20 is an N-channel power MOSFET primarily used in applications such as power supplies, motor drives, and inverters. Its low on-resistance and high-speed switching capabilities make it suitable for DC-DC converters, electric vehicles, and renewable energy systems. Additionally, it's used in industrial automation and lighting control systems, providing efficient power management in various electronic circuits.

Equivalent

The FDP61N20 is a power MOSFET with a 200V, 61A rating. Equivalent products include the IRF230, STP20N20, and FQP20N20. When searching for substitutes, consider specifications such as voltage rating, current capacity, RDS(on), and package type. Always verify compatibility with your specific application requirements.

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