FDP22N50N

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FDP22N50N

MOSFET N-CH 500V 22A TO220-3

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Especificaciones

Series UniFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 25 V
Power Dissipation (Max) 312.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number FDP22

Descripción general

Description

The FDP22N50N is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 22A, making it suitable for power management and switching applications in industrial and consumer electronics.
Key specifications include a low on-resistance (R_DS(on)) which minimizes power loss during operation, and a high-speed switching capability that enhances efficiency in power conversion circuits. The device is often utilized in applications like power supplies, motor drives, and inverters.
The FDP22N50N is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on heat sinks. Its robust construction ensures reliability in demanding environments. Overall, it is a versatile component for engineers seeking efficient control in high-voltage systems.

Features

The FDP22N50N is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 22A, facilitating significant power management.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.24Ω at V_GS = 10V, enhancing efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various gate drive levels.
5. Package Type: Typically comes in a TO-220 package, providing good thermal performance for heat dissipation.
6. Fast Switching Speed: Suitable for applications requiring rapid switching, such as power supplies and motor control systems.
Overall, the FDP22N50N is a robust choice for applications demanding high voltage and current handling with efficient performance.

Package

The FDP22N50N is typically packaged in a TO-220 form factor. This packaging provides adequate heat dissipation and is commonly used for power transistors in various applications.

Pinout

The FDP22N50N is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage. A higher voltage turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is where the main current flows into the MOSFET. It connects to the load in the circuit.
3. Source (S): This pin is connected to the ground or a negative voltage in the circuit. It serves as the return path for the current flowing through the MOSFET.
The FDP22N50N is rated for a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of up to 22A, making it suitable for high-voltage applications such as power supplies and motor drivers.

Manufacturer

The FDP22N50N is manufactured by Fairchild Semiconductor, which is a company specializing in the design and production of a wide range of semiconductor components. Fairchild Semiconductor, founded in 1957, is known for its innovations in power management, analog, and mixed-signal technologies.
In 2016, Fairchild was acquired by ON Semiconductor, which is a larger global supplier of semiconductor-based solutions. ON Semiconductor focuses on providing energy-efficient products, including those for automotive, industrial, and consumer markets. The FDP22N50N is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications, showcasing Fairchild’s expertise in power semiconductor technology.

Application

The FDP22N50N is a N-channel MOSFET commonly used in applications such as power supplies, motor drives, and switching devices. Its high voltage and current ratings make it suitable for industrial automation, inverter circuits, and energy management systems. Additionally, it can be utilized in automotive electronics and consumer electronics for efficient power switching and amplification.

Equivalent

The FDP22N50N is a N-channel MOSFET with a 500V rating and 22A continuous current. Equivalent products include:
1. IRF250
2. STP22N50
3. MTP22N50
4. FQP22N50
Always verify specifications such as Rds(on), gate threshold voltage, and package type to ensure compatibility in your application.

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