FDP027N08B

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FDP027N08B

MOSFET N-CH 80V 120A TO220-3

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Especificaciones

Supplier onsemi
Package Tube
Series PowerTrench®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.7mOhm @ 100A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 178 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 13530 pF @ 40 V
PowerDissipation(Max) 246W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Descripción general

Description

FDP027N08B is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Fairchild Semiconductor. It is designed for power management applications, particularly in switching and amplification circuits. With a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 27A, it is suitable for high-efficiency power supplies, motor drives, and other applications requiring high-speed switching.
The device features low on-resistance (R_DS(on)), which minimizes power loss and enhances thermal performance. The MOSFET is packaged in a TO-220 or similar casing for effective heat dissipation, making it easier to integrate into various electronic designs. Its fast switching capabilities allow for better performance in pulse width modulation (PWM) applications.
When using the FDP027N08B, proper thermal management and adherence to the maximum ratings in the datasheet are essential for ensuring reliability and longevity in the intended applications.

Features

The FDP027N08B is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, allowing for robust operation in high-voltage environments.

2. Current Rating: The continuous drain current (I_D) is rated at 27A, suitable for various power management tasks.
3. R_DS(on): It offers a low on-state resistance (R_DS(on)), typically around 0.027 ohms, which helps reduce conduction losses and improve efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, enabling efficient switching at lower gate drive voltages.
5. Package Type: Available in a TO-220 package, it provides good thermal dissipation, which is crucial for high-power applications.
6. Applications: Commonly used in DC-DC converters, motor drives, and other power management systems.
These features make the FDP027N08B suitable for various high-performance power electronics applications.

Package

The FDP027N08B is packaged in a TO-220 format. This package type allows for efficient thermal management and is commonly used for power semiconductor devices, providing good heat dissipation and ease of mounting on heat sinks.

Pinout

The FDP027N08B is an N-channel MOSFET with a total of 8 pins. Its functions include controlling high-speed switching applications, such as in power management and conversion circuits. The pin configuration typically includes:
1. Gate (G) - This pin controls the MOSFET's switching on and off.
2. Drain (D) - The current flows from the drain to the source when the device is on.
3. Source (S) - This is the terminal through which current exits the device.
The precise pin layout can vary, so it's essential to consult the specific datasheet for the exact pin arrangement and additional details regarding characteristics like maximum voltage, current ratings, and thermal performance.

Manufacturer

The FDP027N08B is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products, including power management solutions, analog devices, and optoelectronics. Fairchild Semiconductor specializes in providing high-performance semiconductor technology and is recognized for its innovation in power MOSFETs, integrated circuits, and other electronic components. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications, focusing on enhancing energy efficiency and enabling advanced electronic applications.

Application

The FDP027N08B is a N-channel MOSFET used in various applications such as power management, switching power supplies, DC-DC converters, motor control, and inverter circuits. Its high efficiency and low on-resistance make it suitable for automotive applications, industrial automation, and renewable energy systems like solar inverters.

Equivalent

The FDP027N08B is a N-channel MOSFET. Equivalent products include the IRF3205, STP30NF10, and FQP30N06L. Always verify specific parameters such as voltage, current ratings, and RDS(on) for compatibility in your application.

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