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FDN358P
SMALL SIGNAL FIELD-EFFECT TRANSI
- Fabricante
- Mfr. Parte #FDN358P
- Paquete SSOT-3
- Hoja de datos FDN358P DataSheet
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Especificaciones
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 1.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 125mOhm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.6 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 182 pF @ 15 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SuperSOT-3 |
Descripción general
Description
Key components include in-depth analysis of current research, exploration of innovative practices, and discussions on ethical considerations in the field. By the end of the course, participants are expected to demonstrate a robust understanding of the subject matter, enabling them to apply their knowledge in real-world scenarios effectively. This prepares students for further academic pursuits or professional opportunities in their chosen domain.
Features
1. Voltage Rating: It typically handles a maximum drain-source voltage (V_DS) of around -30V.
2. Current Rating: The maximum continuous drain current (I_D) is approximately -2.5A.
3. Low On-Resistance: It features a low on-resistance (R_DS(on)), which minimizes power loss during operation.
4. Fast Switching Speed: Suitable for high-frequency applications due to its quick switching capabilities.
5. Thermal Resistance: It has good thermal performance, allowing for efficient heat dissipation.
6. Package Type: Commonly available in surface-mount packages, facilitating compact designs.
7. Applications: Ideal for use in power management, load switching, and battery-operated devices.
These attributes make the FDN358P a versatile choice for various electronic applications, particularly in power regulation and control circuits.
Package
Pinout
1. Gate (G) - Controls the MOSFET operation.
2. Source (S) - The terminal through which carriers enter the device.
3. Drain (D) - The terminal through which carriers leave the device.
4. Gate (G) - For the second MOSFET in the package.
5. Source (S) - Second MOSFET source.
6. Drain (D) - Second MOSFET drain.
7. Drain (D) - Common drain for both MOSFETs.
8. Source (S) - Common source for both MOSFETs.
The FDN358P is designed for applications such as power management, signal switching, and other electronic control systems, offering features like low on-resistance and high speed.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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