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FDMS86101DC
MOSFET N-CH 100V 14.5A DLCOOL56
- Fabricante
- Mfr. Parte #FDMS86101DC
- Paquete PowerTDFN-8
- Hoja de datos
- En stock5887
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Dual Cool™, PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 14.5A (Ta), 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 7.5mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 44 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3135 pF @ 50 V |
| PowerDissipation(Max) | 3.2W (Ta), 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Descripción general
Description
Features
1. Voltage Rating: It typically offers a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain currents up to approximately 50A, allowing for robust operation in demanding environments.
3. RDS(on): The device has a low on-resistance (R_DS(on)), typically around 8.5 mΩ, which contributes to reduced power loss and improved efficiency during operation.
4. Fast Switching: It provides fast switching capabilities, ideal for applications requiring quick response times.
5. Thermal Performance: The MOSFET features good thermal performance, with a maximum junction temperature of 150°C, allowing for reliable operation under high thermal stress.
6. Package Type: It is available in a DPAK surface-mount package, facilitating efficient thermal dissipation and easy integration into circuit designs.
Overall, the FDMS86101DC is suitable for applications such as DC-DC converters, synchronous rectification, and motor control.
Package
Pinout
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
7. Drain 1 (D1): Common drain for both MOSFETs.
8. Source 1 (S1): Common source for both MOSFETs.
9. Gate 1 (G1): Common gate for both MOSFETs.
10. Gate 2 (G2): Additional control for the second MOSFET.
The FDMS86101DC is commonly used in applications such as power management and load switching due to its low R_DS(on) and high efficiency.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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