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FDMS3660S
MOSFET 2N-CH 30V 30A/60A POWER56
- Fabricante
- Mfr. Parte #FDMS3660S
- Paquete PowerTDFN-8
- Hoja de datos
- En stock3521
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
RFQ y Obtenga más descuentos
Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) Asymmetrical |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 30A, 60A |
| RdsOn(Max)@IdVgs | 8mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 2.7V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1765pF @ 15V |
| Power-Max | 1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerTDFN |
Descripción general
Description
Students may learn about data integrity, reporting, and decision-making processes influenced by financial data. The curriculum may involve practical applications, case studies, and projects that help students develop skills essential for careers in finance, analytics, or business intelligence.
Overall, FDMS3660S aims to equip students with the knowledge and skills necessary to navigate the complexities of financial data management in a professional setting.
Features
1. Low RDS(on): This ensures minimal conduction losses, enhancing overall efficiency.
2. High Voltage Rating: Suitable for applications requiring voltages up to 60V.
3. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
4. Thermal Performance: It offers good thermal stability and can handle higher temperatures, ensuring reliable operation.
5. Low Gate Charge (Qg): This results in reduced driver power requirements and faster switching.
6. Compact Package: Often available in surface-mount packages, facilitating space-saving designs.
These features make the FDMS3660S suitable for various applications, including power management, DC-DC converters, and motor control.
Package
Pinout
The pin configuration typically includes:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first MOSFET.
3. Drain 1 - Drain terminal of the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal of the second MOSFET.
6. Drain 2 - Drain terminal of the second MOSFET.
7. Drain 1 (or Source 1) - Common connection point.
8. Source 2 (or Drain 2) - Common connection point.
This configuration allows for efficient switching and is commonly used in applications like power supply circuits and motor drivers.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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