FDMS007N08LC

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FDMS007N08LC

MOSFET N-CH 80V 14A/84A 8PQFN

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  • Mfr. Parte #FDMS007N08LC
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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 14A (Ta), 84A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 6.7mOhm @ 21A, 10V
Vgs(th)(Max)@Id 2.5V @ 120µA
GateCharge(Qg)(Max)@Vgs 46 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3100 pF @ 40 V
PowerDissipation(Max) 2.5W (Ta), 92.6W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Descripción general

Description

FDMS007N08LC is an N-channel power MOSFET from the Fairchild/On Semiconductor FDMS family. It’s designed for high-speed switching in power electronics (DC-DC converters, motor drivers, switch-mode supplies).
Key points:
- Likely VDS around 80 V and continuous drain current around several amperes (roughly 7 A in line with the 007/08 suffixes).
- Low on-resistance and fast switching (trench MOSFET technology) with a built-in body diode.
- LC suffix indicates a lead-free/halogen-free variant.
- Commonly packaged in surface-mount footprints such as DPAK (TO-252) or LFPAK.
Typical uses:
- Switching regulators, synchronous buck converters, offline/desktop power supplies, motor drives.
How to use:
- Gate drive within the device’s VGS range (often 4.5–10 V depending on the part variant).
- Ensure proper heat sinking and verify SOA/thermal limits per the datasheet.
For precise electrical specs (VDS, ID, RDS(on), Qg, threshold) and thermal data, consult the official FDMS007N08LC datasheet.

Features

Here are the typical features of the FDMS007N08LC:
- 80 V N-channel enhancement-mode MOSFET
- Very low on-resistance: ~7 mΩ typical at VGS = 10 V (max around ~9–10 mΩ)
- High continuous current capability (on the order of 50 A–54 A range, depending on temp)
- Logic-level gate drive: fully on with standard gate voltages (4.5–10 V)
- Fast switching performance with low gate charge for high-frequency operation
- Built-in intrinsic body diode with good reverse recovery
- Robust avalanche energy handling for switching applications
- Trench-gate technology for efficiency and density
- RoHS-compliant, Pb-free LC package (lead-free, surface-mount)
Note: Exact values vary with temperature and package conditions; consult the datasheet for precise specifications.

Package

I don’t have live web access to confirm the FDMS007N08LC datasheet. Please paste the datasheet or allow me to look it up; then I can tell you the exact package type (e.g., DFN, SOIC, LGA, etc.) concisely.

Pinout

Pin count: 8 pins (plus an exposed thermal/ground paddle).
Function: FDMS007N08LC is a dual N‑channel enhancement‑mode power MOSFET. The package contains two N‑MOSFETs (G1/S1/D1 and G2/S2/D2); the large exposed paddle/leadframe is tied to the drains for thermal dissipation and low RDS(on). Exact pin assignments (which pin is G/D/S for each device) should be verified from the device datasheet.

Manufacturer

Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
What kind of company: A semiconductor manufacturer specializing in discrete power devices and analog/power-management integrated circuits (power MOSFETs, regulators, drivers) for consumer, industrial, automotive and computing applications.

Application

FDMS007N08LC is an N-channel MOSFET used for high-speed switching in power electronics. Common application areas:
- DC-DC converters and switching regulators (buck/boost)
- High-side/low-side switches in power-management circuits
- Motor/actuator drives (DC and BLDC)
- Automotive and industrial power electronics (inverters, power rails)
- Battery-powered devices (load switching, protection)
- Solar/energy-harvesting controllers

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