FDMC86102LZ

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FDMC86102LZ

MOSFET N-CH 100V 7A/18A 8MLP

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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 7A (Ta), 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 24mOhm @ 6.5A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1290 pF @ 50 V
PowerDissipation(Max) 2.3W (Ta), 41W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-MLP (3.3x3.3)

Descripción general

Description

FDMC86102LZ is a N-channel MOSFET designed for efficient power management applications. It features a low on-resistance (R_DS(on)), enabling reduced power loss and improved thermal performance, which is ideal for applications like DC-DC converters, power supplies, and motor control. The device supports high-speed switching and has a maximum drain-source voltage (V_DS) rating that allows it to handle significant voltage without failure. With its compact package and robust electrical characteristics, the FDMC86102LZ is suitable for various electronic devices, including consumer electronics and industrial equipment. Its high reliability and efficiency make it a preferred choice for engineers seeking to optimize circuit performance.

Features

The FDMC86102LZ is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 30A at 25°C.
3. R_DS(on): Low on-resistance of approximately 0.045Ω at V_GS = 10V, enhancing efficiency.
4. Fast Switching: Optimized for fast switching applications, making it suitable for converters and inverters.
5. Package: Available in a compact TO-220 package, facilitating easy heat dissipation.
6. Thermal Performance: Features excellent thermal characteristics, with a high maximum junction temperature.
7. Gate Threshold Voltage: Low gate threshold voltage for better drive compatibility.
These attributes make the FDMC86102LZ ideal for a variety of applications, including power supplies, motor drives, and battery management systems.

Package

The FDMC86102LZ is packaged in a PowerDFN package type, specifically in a 3mm x 3mm footprint. This package design enhances thermal performance and minimizes parasitic inductance, making it suitable for high-efficiency power management applications.

Pinout

The FDMC86102LZ is a power MOSFET in a dual package configuration, specifically designed for use in power management applications. It features a total of 8 pins. The pinout functions are as follows:
1. Gate (G): Controls the MOSFET switching.
2. Source (S): Connects to the ground or the lower potential side of the load.
3. Drain (D): Connects to the higher potential side of the load.
The specific configuration typically includes two N-channel MOSFETs, allowing for enhanced efficiency in applications such as synchronous rectification or DC-DC converters.
For detailed pin assignments and additional specifications, refer to the manufacturer's datasheet.

Manufacturer

The FDMC86102LZ is manufactured by Fairchild Semiconductor, a company that specializes in the design and production of semiconductor solutions. Fairchild Semiconductor, now part of ON Semiconductor, focuses on providing a wide range of products, including power management, analog, and discrete semiconductor components. The company serves various industries such as automotive, industrial, and consumer electronics, emphasizing innovation and efficiency in their semiconductor technologies.

Application

The FDMC86102LZ is a power MOSFET commonly used in applications such as DC-DC converters, power supply circuits, motor drives, and battery management systems. Its high efficiency and fast switching capabilities make it suitable for use in consumer electronics, telecommunications, automotive applications, and renewable energy systems like solar inverters.

Equivalent

The FDMC86102LZ is a N-channel MOSFET primarily used in power applications. Equivalent products include the NXP PSMN2R8-80BS and the Infineon BSC028N06NS. Always check specifications like voltage, current ratings, and RDS(on) to ensure compatibility in your application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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