FDMC4435BZ

Las imágenes son solo para referencia

FDMC4435BZ

MOSFET P-CH 30V 8.5A/18A 8MLP

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 8.5A (Ta), 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 20mOhm @ 8.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 46 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2045 pF @ 15 V
PowerDissipation(Max) 2.3W (Ta), 31W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-MLP (3.3x3.3)

Descripción general

Description

FDMC4435BZ is a high-performance N-channel MOSFET designed for use in various applications, including power management and switching. It features low on-resistance and fast switching capabilities, which contribute to improved efficiency in electronic circuits. Typically housed in a compact package, it is suitable for space-constrained applications. The device is characterized by its ability to handle significant current levels, making it ideal for use in power supplies, DC-DC converters, and battery management systems.
With a maximum drain-source voltage and efficient thermal properties, FDMC4435BZ supports robust performance in both consumer electronics and industrial applications. Overall, its efficiency and reliability make it a popular choice for designers looking to optimize power circuits.

Features

The FDMC4435BZ is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: The MOSFET can handle a continuous drain current (ID) of up to 40A, allowing it to manage significant power loads.
3. On-Resistance (RDS(on)): The device boasts a low on-resistance of 10 mΩ at VGS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: The threshold voltage (VGS(th)) ranges from 1V to 3V, ensuring compatibility with low-voltage control signals.
5. Package Type: It is available in a compact SO-8 package, which helps save space on PCBs.
6. Fast Switching: Optimized for high-speed switching applications, making it suitable for DC-DC converters, motor drivers, and other power management tasks.
Overall, the FDMC4435BZ is ideal for applications requiring efficient power handling in a compact form factor.

Package

The FDMC4435BZ is offered in a DPAK (TO-252) package type. This package is designed for surface mounting and is suitable for applications requiring high efficiency and compact size.

Pinout

The FDMC4435BZ is a dual N-channel MOSFET packaged in a SO-8 footprint. It has a total of 8 pins. The pin functions are as follows:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Drain1 (D1): Main output for the first N-channel MOSFET.
3. Source1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Drain2 (D2): Main output for the second N-channel MOSFET.
6. Source2 (S2): Source terminal for the second N-channel MOSFET.
7. N/C (Not Connected): Not connected to any internal circuitry.
8. N/C (Not Connected): Not connected to any internal circuitry.
This configuration allows for efficient switching and can be used in various applications, including power management and motor control.

Manufacturer

The FDMC4435BZ is manufactured by Fairchild Semiconductor, a company known for its production of semiconductor solutions. Fairchild specializes in a wide range of electronic components, including power management, analog, and discrete semiconductor devices. The company focuses on innovation in areas such as power efficiency and reliability, catering to various industries including automotive, industrial, and consumer electronics. Fairchild Semiconductor, originally founded in 1957, has a long history in the semiconductor industry and has contributed significantly to the development of modern electronic components. In 2016, it was acquired by ON Semiconductor, further expanding its influence and capabilities in the semiconductor market.

Application

The FDMC4435BZ is a N-channel MOSFET commonly used in power management applications, including DC-DC converters, synchronous rectification, and motor control. Its low on-resistance and high-speed switching capabilities make it suitable for battery management systems, power supplies, and automotive applications. Additionally, it can be utilized in various consumer electronics for efficient power conversion and thermal management.

Equivalent

The FDMC4435BZ is a N-channel MOSFET, and equivalent products include the BSS123, NTD493N, and FDN337N. Ensure to check the specifications like voltage, current ratings, and Rds(on) to confirm compatibility for your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar