FDG6303N

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FDG6303N

MOSFET 2N-CH 25V 0.5A SC88

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  • Mfr. Parte #FDG6303N
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Especificaciones

Part Status Obsolete
Base Product Number FDG6303
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 500mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6)
Packaging Cut Tape (CT), Tape & Reel (TR)

Descripción general

Description

FDG6303N refers to a specific course or module, typically found in academic or professional settings. While the exact content may vary depending on the institution, courses like FDG6303N often focus on advanced topics relevant to a particular field, such as finance, data science, or technology.
Key objectives usually include enhancing theoretical knowledge, practical skills, and critical thinking related to the subject matter. Participants might engage in case studies, research projects, and collaborative activities to deepen their understanding and apply concepts in real-world scenarios.
Assessment methods may include exams, presentations, and group projects, aimed at evaluating both individual and collective learning outcomes. Overall, FDG6303N is designed to equip students or professionals with the necessary competencies to excel in their respective areas. For precise details, including syllabus and prerequisites, it is advisable to refer to the specific educational institution offering the course.

Features

The FDG6303N is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Low On-Resistance (R_DS(on)): Ensures minimal power loss during operation, enhancing efficiency.
2. High Drain-Source Voltage (V_DS): Typically rated at 30V, suitable for a range of applications.
3. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
4. High Continuous Drain Current (I_D): Capable of handling substantial load currents, improving reliability in demanding applications.
5. Thermal Performance: Designed with excellent thermal characteristics, allowing for efficient heat dissipation.
6. Package Type: Available in compact packaging (e.g., TO-220, DPAK), facilitating integration into various circuit designs.
This MOSFET is commonly used in DC-DC converters, motor drivers, and power management systems in consumer electronics and industrial applications.

Package

The FDG6303N is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs, ensuring reliable performance in various electronic applications.

Pinout

The FDG6303N is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a TO-220 package with a pin count of 3. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET operation by applying a voltage to turn it on or off.
2. Drain (D) - This is the output pin where the load is connected. The current flows from drain to source when the device is turned on.
3. Source (S) - This pin is connected to ground or the negative side of the power supply, providing the return path for the current.
The FDG6303N is typically used in applications such as power management, switching, and amplification. Its low on-resistance and high-speed switching capabilities make it suitable for various electronic circuits.

Manufacturer

The FDG6303N is manufactured by Fairchild Semiconductor, a company that specializes in the production of semiconductor solutions. Fairchild Semiconductor is known for its broad portfolio of products, including power management ICs, analog devices, and discrete components, which are used in various applications such as consumer electronics, automotive, and industrial machinery. The company focuses on innovation and efficiency in power management technologies, making it a key player in the semiconductor industry.

Application

FDG6303N is commonly used in various applications, including power management systems, DC-DC converters, and voltage regulators. It is particularly effective in automotive electronics, telecom equipment, and industrial automation due to its high efficiency and thermal performance. Additionally, its versatility makes it suitable for use in consumer electronics and renewable energy systems.

Equivalent

The FDG6303N chip is an N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Always check specifications like voltage, current ratings, and package type to ensure compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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