FDD7N60NZTM

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FDD7N60NZTM

MOSFET N-CH 600V 5.5A DPAK

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series UniFET-II™
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 5.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.25Ohm @ 2.75A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 730 pF @ 25 V
PowerDissipation(Max) 90W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Descripción general

Description

The FDD7N60NZTM is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage and high-current applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A, making it suitable for power management and switching applications in devices like power supplies, motor controllers, and inverters.
Key specifications include a low on-resistance (R_DS(on)) that minimizes power loss during operation, enhancing efficiency. It typically has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring compatibility with various gate drive circuits. The FDD7N60NZTM is housed in a TO-220 package, allowing for efficient heat dissipation.
This MOSFET is widely used in applications requiring high voltage handling and efficient switching capabilities, contributing to overall system reliability and performance. Proper thermal management and design considerations are crucial for optimizing its performance in various applications.

Features

The FDD7N60NZTM is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 7A, with a pulsed current capability of higher values.
3. Low R_DS(on): It has a low on-resistance (R_DS(on)), typically around 0.75Ω, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: This MOSFET is designed for fast switching, making it ideal for applications in switch-mode power supplies and inverters.
5. Thermal Resistance: It features a low thermal resistance, allowing for better heat dissipation and improved reliability.
6. Package: Available in TO-220 and other packages for easy heat management and integration into various circuits.
These characteristics make the FDD7N60NZTM suitable for applications in power conversion and motor control systems.

Package

The FDD7N60NZTM is typically packaged in a TO-220 format. This package type is designed for power transistors, providing effective heat dissipation and ease of mounting on heatsinks for enhanced thermal management.

Pinout

The FDD7N60NZTM is a N-channel MOSFET with a pin count of 3. It typically features the following pin assignments:
1. Gate (G): The control terminal which turns the MOSFET on or off.
2. Drain (D): The terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S): The terminal through which the current flows into the MOSFET.
The FDD7N60NZTM has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of up to 7A. It is designed for high-voltage applications, making it suitable for power management, switching, and amplifier circuits. It features low R_DS(on) for improved efficiency and thermal performance.

Manufacturer

The FDD7N60NZTM is manufactured by Fairchild Semiconductor, a company known for its production of semiconductor components. Fairchild Semiconductor specializes in power management, analog, and discrete devices, including MOSFETs like the FDD7N60NZTM, which is a N-channel MOSFET designed for power switching applications. Established in 1957, Fairchild has a long history in the semiconductor industry and has been influential in developing various technologies. In 2016, Fairchild was acquired by ON Semiconductor, expanding its reach and capabilities in the electronics market. The company focuses on providing innovative solutions for various sectors, including automotive, industrial, and consumer electronics.

Application

The FDD7N60NZTM is a N-channel MOSFET primarily used in high-efficiency power switching applications. Its application areas include power supplies, motor control, and inverters for renewable energy systems. It is also suitable for automotive applications, lighting controls, and DC-DC converters, due to its high voltage rating and low on-resistance, which enhance performance and thermal management.

Equivalent

The FDD7N60NZTM is a N-channel MOSFET with a 600V rating and 7A continuous drain current. Equivalent products include the IRF840, STP7NK60Z, and MTP7N60E. Always verify specifications such as R_DS(on), gate threshold voltage, and package type to ensure compatibility for your specific application.

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