EPC2218

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EPC2218

GANFET N-CH 100V DIE

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  • Mfr. Parte #EPC2218
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Especificaciones

Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 13.6 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1570 pF @ 50 V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package Die
Packaging Cut Tape (CT), Tape & Reel (TR)

Descripción general

Description

EPC2218 is a GaN high-electron-mobility transistor (HEMT) from Efficient Power Conversion (EPC), part of the company’s eGaN FET family. It is an enhancement‑mode (normally off) power switch designed for fast, efficient switching in power electronics.
Why it’s used:
- Much lower switching losses and higher frequency operation than silicon MOSFETs
- Enables smaller magnetics, lighter, and more compact power supplies and converters
- Suitable for DC–DC converters, point‑of‑load regulators, adapters, telecom/server power, and motor drives
Key notes:
- Exact ratings (voltage, current, Rds(on), Qg) depend on the specific variant; consult the EPC2218 datasheet for complete specs and graphs.
- Requires a proper GaN gate driver and careful layout to manage fast switching edges and prevent parasitic oscillations.
- Practical use benefits from short gate traces, appropriate gate resistors, and solid thermal management.
For precise details and application guidance, refer to the official EPC2218 datasheet and EPC application notes.

Features

EPC2218 is a GaN power stage from Efficient Power Conversion. Key features (concise):
- Integrated GaN half-bridge with gate driver in a single package
- Very high switching speed and efficiency (no reverse-recovery losses)
- Ultra-low parasitic inductance and compact layout
- Gate drive compatible with logic-level signals (0–5 V) with dead-time control
- Built-in protections: undervoltage lockout, overcurrent, overtemperature, short-circuit protection
- Suitable for high-frequency applications (hundreds of kHz to several MHz)
- Ideal for DC-DC converters, motor drives, class-D audio, solar/inverter topologies
- Thermally optimized package (often with exposed pad) for good heat sinking
Note: exact voltage/current ratings vary by revision; consult the official EPC2218 datasheet for precise specs.

Package

EPC2218 is a GaN FET packaged in a QFN-16 (3×3 mm) with an exposed pad for thermal dissipation.

Pinout

I don’t have live web access to fetch the EPC2218 datasheet right now. Generally, eGaN FETs have three electrical terminals (Gate, Source, Drain), but the physical package often uses multiple pads (e.g., a large exposed drain pad plus separate gate and source pads). For the exact pin count and pin‑out (pad numbering and functions) please either (a) allow me to fetch the EPC2218 datasheet or (b) paste the datasheet/package drawing here and I’ll summarize it concisely.

Manufacturer

Manufacturer: Efficient Power Conversion (EPC).
What kind of company: EPC is a fabless semiconductor company that designs and supplies enhancement‑mode gallium nitride (eGaN) power transistors and integrated circuits for high‑efficiency, high‑frequency power conversion, motor drives, RF, and related applications.

Application

High-frequency, high-efficiency switching power applications:
- DC-DC converters (buck/boost, multiphase)
- Point-of-load regulators for servers/telecom
- LED lighting drivers
- Wireless power receivers/transmitters and battery charging
- Class-D audio amplifiers
- Motor drives
- General power adapters and other high-speed switch-mode power stages

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