DMN3730UFB-7

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DMN3730UFB-7

MOSFET N-CH 30V 750MA 3DFN

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Especificaciones

Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 750mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 460mOhm @ 200mA, 4.5V
Vgs(th)(Max)@Id 950mV @ 250µA
GateCharge(Qg)(Max)@Vgs 1.6 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 64.3 pF @ 25 V
PowerDissipation(Max) 470mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage X1-DFN1006-3

Descripción general

Description

The DMN3730UFB-7 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient switching applications. It features a low on-resistance and fast switching speeds, making it suitable for power management, DC-DC converters, and other applications requiring efficient power handling.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 10A. The device typically has a threshold voltage (V_GS) ranging from 1V to 3V, allowing for operations with low gate drive voltages. Its compact package design enables space-saving in circuit layouts, and the -7 suffix indicates that it is supplied in a tape-and-reel format for automated assembly processes.
With thermal performance optimized for various environments, the DMN3730UFB-7 is suitable for consumer electronics, automotive, and industrial applications, where reliable and efficient power management is crucial.

Features

The DMN3730UFB-7 is a N-channel MOSFET designed for various applications, especially in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V.
2. Continuous Drain Current: It can handle up to 73A of continuous drain current, making it suitable for high-power applications.
3. Low On-Resistance: The device has a low Rds(on) value, typically around 6.5 mΩ at a gate-source voltage (Vgs) of 10V, which reduces power loss and improves efficiency.
4. Fast Switching Speed: It offers quick turn-on and turn-off, beneficial for high-frequency applications.
5. Package Type: The DMN3730UFB-7 is housed in a TO-220 package, allowing for effective heat dissipation.
6. RoHS Compliant: It complies with RoHS standards, ensuring it is environmentally friendly.
These features make the DMN3730UFB-7 a versatile choice for applications such as motor drives, power supplies, and other switching circuits.

Package

The DMN3730UFB-7 is packaged in a SOT-23 (Small Outline Transistor) package type. This compact surface-mount package is commonly used in electronic circuits for its small footprint and efficient heat dissipation properties.

Pinout

The DMN3730UFB-7 is a dual N-channel MOSFET with a pin count of 8. It is typically used for low-side switching applications in power management circuits.
The pin functions are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Output for the first N-channel MOSFET.
3. Source 1 (S1): Common source for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Output for the second N-channel MOSFET.
6. Source 2 (S2): Common source for the second N-channel MOSFET.
7. Common Source (CS): Connects the source terminals of both MOSFETs.
8. Unused/NC: Not connected or utilized.
This device is suitable for various applications, including load switching and motor control, due to its efficient performance and low on-resistance.

Manufacturer

The DMN3730UFB-7 is manufactured by Diodes Incorporated, a global manufacturer and supplier of high-quality semiconductor products. Founded in 1959, Diodes Incorporated specializes in discrete, logic, and analog semiconductor products, catering to various applications including consumer electronics, automotive, industrial, and communications. The company focuses on innovation and reliability, providing a wide range of components such as diodes, transistors, rectifiers, and more, aimed at enhancing performance and efficiency in electronic designs. With a strong emphasis on quality and customer satisfaction, Diodes Incorporated operates globally, serving a diverse clientele across multiple industries.

Application

The DMN3730UFB-7 is a N-channel MOSFET used in various applications such as power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, where efficiency and thermal performance are critical.

Equivalent

The DMN3730UFB-7 is an N-channel MOSFET. Equivalent products include the BSS138, BS170, and IRLML2502. These alternatives may have similar specifications in terms of voltage, current rating, and package type, but always verify datasheets for specific parameters and suitability in your application.

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