DMN10H220L-7

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DMN10H220L-7

MOSFET N-CH 100V 1.4A SOT23

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 1.4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 220mOhm @ 1.6A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.3 nC @ 10 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 401 pF @ 25 V
PowerDissipation(Max) 1.3W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Descripción general

Description

The DMN10H220L-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching circuits. With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 10A, it is suitable for medium to high power applications. The device features a low on-resistance (R_DS(on)), which enables efficient operation and reduces heat generation.
It is housed in a compact SOT-223 package, making it suitable for space-constrained designs. The DMN10H220L-7 is characterized by fast switching speeds, which enhances its performance in applications like DC-DC converters, motor drivers, and switching power supplies.
It is critical to consider thermal management and ensure proper heat dissipation to maintain reliability during operation. Overall, the DMN10H220L-7 is an effective choice for engineers seeking a robust and efficient MOSFET for their electronic designs.

Features

The DMN10H220L-7 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 20V, making it suitable for low-voltage circuits.
2. Current Rating: The MOSFET can handle continuous drain currents up to 10A, providing good performance in various applications.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of around 0.22 ohms, which reduces power loss during operation and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 1V to 3V, allowing for easy drive with low-voltage logic levels.
5. Package: It is available in a compact SOT-223 package, facilitating efficient use in space-constrained designs.
6. Applications: Commonly used in power management, switching applications, and as a low-side switch.
Overall, the DMN10H220L-7 offers robust performance for a range of electronic applications requiring efficient power management.

Package

The DMN10H220L-7 is packaged in a DPAK (TO-252) package type. This surface-mount package is designed for efficient heat dissipation and is commonly used for power MOSFET applications.

Pinout

The DMN10H220L-7 is an N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. Gate (G): This pin controls the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load connects. Current flows out of the drain when the MOSFET is activated.
3. Source (S): This pin is the input where the current enters the MOSFET. It connects to the ground or a lower potential in most applications.
4. Body Diode: Integrated within the MOSFET structure, it provides a path for current in the reverse direction in some configurations.
The device is designed for various applications, including switching and amplifying signals in power electronics. It has low on-resistance and fast switching capabilities, making it suitable for efficiency-critical designs.

Manufacturer

The DMN10H220L-7 is manufactured by Nexperia, a semiconductor company specializing in discrete, logic, and MOSFET components. Nexperia was formed in 2017 after Philips’ semiconductor division was acquired by a global investment firm. The company focuses on providing high-quality, reliable semiconductor products across various applications, including automotive, industrial, and consumer electronics. Nexperia is known for its commitment to efficiency and innovation in the semiconductor industry.

Application

The DMN10H220L-7 is a N-channel MOSFET commonly used in power management applications, including switching power supplies, LED drivers, and motor control circuits. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial applications. Additionally, it can be utilized in data processing systems for load switching and signal amplification.

Equivalent

The DMN10H220L-7 is a N-channel MOSFET. Equivalent products include the BSS138, BS170, and IRF520, depending on specific requirements like voltage and current ratings. Always verify specifications such as V_DS, I_D, and R_DS(on) to ensure compatibility for your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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