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CSD88539ND
MOSFET 2N-CH 60V 15A 8SOIC
- Fabricante
- Mfr. Parte #CSD88539ND
- Paquete SOIC (D)-8
- Hoja de datos
- En stock3021
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 15A |
| RdsOn(Max)@IdVgs | 28mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3.6V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 9.4nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 741pF @ 30V |
| Power-Max | 2.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Descripción general
Description
Key specifications include a maximum continuous drain current, low gate threshold voltage, and fast switching capabilities, making it suitable for high-frequency applications. The CSD88539ND is packaged in a compact surface-mount configuration, facilitating easier integration into modern circuit designs.
Additionally, it offers excellent reliability and thermal characteristics, ensuring stable operation under varying load conditions. This MOSFET is part of Texas Instruments' portfolio, reflecting their commitment to high-quality semiconductor solutions for power management. Overall, the CSD88539ND is an excellent choice for designers seeking high efficiency and performance in their electronic systems.
Features
1. Low On-Resistance (Rds(on)): Offers low conduction losses, improving overall efficiency.
2. Fast Switching Speed: Suitable for high-frequency applications, which enhances performance in power management and switching circuits.
3. Thermal Performance: Features excellent thermal characteristics, enabling reliable operation in demanding environments.
4. Low Gate Charge (Qg): Reduces the power required to switch the MOSFET, contributing to energy efficiency.
5. Low Body Diode Reverse Recovery: Enhances performance in applications requiring fast switching, such as synchronous rectification.
6. Robust Package: Typically available in a compact SOIC or similar package for efficient thermal dissipation and space-saving designs.
These features make the CSD88539ND ideal for applications like DC-DC converters, power supplies, and motor control systems.
Package
Pinout
1. D (Drain) - The terminal where the current flows out of the MOSFET.
2. G (Gate) - The terminal used to control the MOSFET; applying a voltage here turns the device on or off.
3. S (Source) - The terminal where the current enters the MOSFET.
4. R (Body Diode) - Integrated body diode allowing current to flow in the reverse direction, providing protection.
5. Tab/Heatsink - Often used for thermal management, this connection provides heat dissipation.
This device's compact design and efficient performance make it suitable for various high-frequency applications. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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