CSD86330Q3D

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CSD86330Q3D

MOSFET 2N-CH 25V 20A 8LSON

  • Fabricante
  • Mfr. Parte #CSD86330Q3D
  • Paquete 8-PowerLDFN
  • Hoja de datos
  • En stock7624

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType 2 N-Channel (Half Bridge)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 25V
Current-ContinuousDrain(Id)@25°C 20A
RdsOn(Max)@IdVgs 9.6mOhm @ 14A, 8V
Vgs(th)(Max)@Id 2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs 6.2nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 920pF @ 12.5V
Power-Max 6W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-PowerLDFN

Descripción general

Description

CSD86330Q3D is a high-performance, synchronous step-down power module from Texas Instruments. It is designed for applications requiring a compact, efficient power supply solution, such as in telecommunications, industrial, and consumer electronics. The module integrates a power stage with a controller, offering high efficiency and ease of use while minimizing external component count. With an input voltage range of 4.5V to 17V and an output current capability of up to 3A, it provides excellent load transient response and thermal performance. Key features include adjustable output voltage, built-in protection mechanisms (overcurrent, thermal shutdown), and a compact package that facilitates space-saving designs. The CSD86330Q3D is suitable for a variety of applications, including powering FPGAs, processors, and other digital loads, making it a versatile choice for designers seeking reliable and efficient power solutions.

Features

The CSD86330Q3D is a high-performance power MOSFET designed for use in various applications, including power management and DC-DC converters. Its main features include:
1. Low On-Resistance (Rds(on)): This ensures efficient power conversion with minimal energy loss.
2. High Voltage Rating: Typically rated for up to 30V, making it suitable for various power supply applications.
3. Low Gate Charge (Qg): Reduces switching losses and improves efficiency, beneficial for high-frequency operations.
4. Thermal Performance: Designed for enhanced thermal management, allowing for better heat dissipation and reliability.
5. Compact Package: Available in a small footprint, facilitating space-saving designs in modern electronics.
6. Robustness: Built to withstand challenging operating conditions, ensuring long-term reliability.
Overall, the CSD86330Q3D is ideal for applications such as battery management systems, power supply circuits, and electric vehicles where efficiency and reliability are critical.

Package

The CSD86330Q3D is packaged in a VQFN (Very Thin Quad Flat No-lead) format, specifically a 3 mm x 3 mm package. This type of packaging allows for efficient thermal management and a compact footprint suitable for high-density applications.

Pinout

The CSD86330Q3D is a power MOSFET from Texas Instruments with a pin count of 8. It is designed for high-efficiency power management applications. The pin functions are as follows:
1. GATE (Pin 1): Gate control for turning the MOSFET on/off.
2. DRAIN (Pins 2, 3, 4): The output pin connected to the load; it conducts current.
3. SOURCE (Pin 5): Common reference point, typically connected to ground.
4. GND (Pin 6): Ground reference for the control circuitry.
5. GND (Pin 7): Another ground pin for enhanced thermal performance.
6. GATE (Pin 8): Additional gate connection for improved drive capability.
These pins facilitate the operation of the device in various power applications, ensuring efficient performance and thermal management.

Manufacturer

The CSD86330Q3D is manufactured by Texas Instruments (TI), a global semiconductor company. Founded in 1930, Texas Instruments is headquartered in Dallas, Texas, and is known for designing and manufacturing a wide range of analog and digital semiconductor devices. Their products are used in various applications, including automotive, industrial, communications, and consumer electronics. TI specializes in analog chips, embedded processors, and digital signal processors, playing a significant role in the development of technology across multiple sectors. The company is also recognized for its commitment to innovation and sustainability in the semiconductor industry.

Application

The CSD86330Q3D is a Power MOSFET driver used in various applications including DC-DC converters, power management systems, motor drives, and industrial automation. It is designed for high efficiency and can handle high switching frequencies, making it suitable for compact and high-performance designs in consumer electronics, renewable energy systems, and electric vehicle powertrains.

Equivalent

The CSD86330Q3D is a power MOSFET from Texas Instruments. Equivalent products include:
1. IRF3205 (Infineon)
2. BSC050N06LS (Vishay)
3. STP75NF75 (STMicroelectronics)
4. AO3401 (Alpha & Omega Semiconductor)
Ensure to check parameters like V_DS, R_DS(on), and package type for compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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