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CSD25485F5
MOSFET P-CH 20V 3.2A 3PICOSTAR
- Fabricante
- Mfr. Parte #CSD25485F5
- Paquete
- Hoja de datos
- En stock5942
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 8V |
| RdsOn(Max)@IdVgs | 35mOhm @ 900mA, 8V |
| Vgs(th)(Max)@Id | 1.3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.5 nC @ 4.5 V |
| Vgs(Max) | -12V |
| InputCapacitance(Ciss)(Max)@Vds | 533 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 3-PICOSTAR |
Descripción general
Description
An "Introduction to CSD25485F5" course would generally aim to familiarize students with foundational concepts, methodologies, and practical applications related to the subject matter. It may involve lectures, hands-on projects, and assessments to ensure a comprehensive understanding of the material.
For more accurate information, please check the specific institution's course catalog or syllabus associated with CSD25485F5.
Features
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 25V.
2. Current Handling: Capable of handling continuous drain currents up to 90A, making it suitable for high-load applications.
3. Low R_DS(on): Offers low on-resistance, which minimizes conduction losses and improves overall efficiency.
4. Fast Switching: Designed for high-speed switching applications, reducing transition losses.
5. Thermal Performance: Good thermal characteristics allow for effective heat dissipation, enhancing reliability.
6. Package Type: Available in a compact package, facilitating easier integration into circuit designs.
These features make the CSD25485F5 ideal for use in power supplies, DC-DC converters, and other energy-efficient applications.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching operation.
2. Source (S): Connects to the source terminal of the MOSFET, typically at a lower potential or ground.
3. Drain (D): Connects to the drain terminal, where the load is connected.
This device is known for its low on-resistance and high-speed switching capabilities, making it suitable for various applications such as power management and DC-DC converters. Always refer to the datasheet for detailed specifications and characteristics.
Manufacturer
Application
Equivalent
1. BSC100N06LS - N-channel MOSFET by Infineon.
2. IRF3205 - N-channel MOSFET by Infineon.
3. STP75NF75 - N-channel MOSFET by STMicroelectronics.
Always check the datasheets for specific electrical characteristics to ensure compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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