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CSD25480F3
MOSFET P-CH 20V 1.7A 3PICOSTAR
- Fabricante
- Mfr. Parte #CSD25480F3
- Paquete
- Hoja de datos CSD25480F3 DataSheet
- En stock22821
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Especificaciones
| Supplier | Texas Instruments |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1.7A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 8V |
| RdsOn(Max)@IdVgs | 132mOhm @ 400mA, 8V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.91 nC @ 4.5 V |
| Vgs(Max) | -12V |
| InputCapacitance(Ciss)(Max)@Vds | 155 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 3-PICOSTAR |
Descripción general
Description
Depending on the institution, the course might also address emerging technologies and industry trends, preparing students for real-world challenges in software development. Assessments may include coding assignments, group projects, and examinations to evaluate students’ understanding and application of the material.
Overall, CSD25480F3 aims to equip students with essential skills and knowledge for a successful career in computer science and related fields.
Features
- Voltage Rating: 80V maximum, making it suitable for high-voltage applications.
- Low R_DS(on): Features a low on-resistance of 4.5 mΩ (typical at Vgs = 10V), enhancing efficiency by reducing conduction losses.
- High Speed: Fast switching capabilities, which improve efficiency in applications like DC-DC converters and power supplies.
- Thermal Performance: Robust thermal characteristics allow for effective heat dissipation, supporting higher power levels.
- Package Type: Available in a compact SOIC-8 package, facilitating space-saving designs.
- Applications: Ideal for use in synchronous rectification, motor control, and load switching applications.
These features make the CSD25480F3 a reliable choice for designers seeking efficient power management solutions.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching; connects to a voltage to turn the device on or off.
2. Drain (D): The terminal through which the current exits the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. GND: Ground connection.
5. D1: Drain connection for one of the MOSFETs.
6. S1: Source connection for one of the MOSFETs.
7. D2: Drain connection for the second MOSFET.
8. S2: Source connection for the second MOSFET.
The device is typically used in power management applications due to its low on-resistance and fast switching capabilities. It is suitable for applications like DC-DC converters and power management circuits. Always refer to the specific datasheet for detailed electrical characteristics and limitations.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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