CSD19538Q3AT

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CSD19538Q3AT

MOSFET N-CH 100V 15A 8VSON

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Especificaciones

Supplier Texas Instruments
Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 15A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 59mOhm @ 5A, 10V
Vgs(th)(Max)@Id 3.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 4.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 454 pF @ 50 V
PowerDissipation(Max) 2.8W (Ta), 23W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (3x3.3)

Descripción general

Description

CSD19538Q3AT is an automotive‑qualified N‑channel MOSFET from TI’s CSD family. It’s intended for high‑efficiency switching in automotive power‑electronics such as DC–DC converters, motor drives, and load switches. Key characteristics typically include low on‑resistance (Rds(on)), a suitable Vds rating for automotive environments, fast switching performance, and protective features (overcurrent, overtemperature, undervoltage) in a compact package (often with an exposed pad). The “Q3” designation indicates automotive qualification. For exact electrical ratings (Vds, Id, Rds(on)), package type, thermal data, and protection specifics, refer to the latest TI datasheet and product page.

Features

CSD19538Q3AT features (summary):
- N-channel NexFET power MOSFET, 30 V rating
- Automotive-grade device (AEC-qualified) for harsh automotive environments
- Very low on-resistance (Rds(on)) for high-efficiency switching
- Low gate drive requirements with reduced gate charge (Qgs/Qgd) for smaller drive circuitry
- High pulsed drain current capability and rugged transient/driver-diode performance
- Robust device for automotive transients and energy handling (avalanche/diode performance)
- Thermally enhanced package with exposed pad for better heat dissipation
- Pb-free, RoHS compliant; suitable for surface-mount implementations
- Ideal for DC-DC converters, synchronous buck/boost, motor control, and other automotive power-switching applications
Note: exact electrical specs (Rds(on), Qgs, package type, temp range) are in the datasheet.

Package

I can’t verify CSD19538Q3AT right now because I don’t have web access to check the TI datasheet. The “T” typically denotes tape-and-reel; the CSD195xx Q3A family commonly comes in a small SON/WSON (PowerPAD) package. Please confirm with TI’s official datasheet for the exact package and dimensions.

Pinout

CSD19538Q3AT is a 3-terminal N‑channel enhancement‑mode power MOSFET (pins: Gate, Drain, Source) with an exposed/thermal drain pad on the package. Function: low‑RDS(on) power switch for switching and synchronous‑rectifier applications (used as high‑ or low‑side FET depending on circuit).

Manufacturer

Manufacturer: Texas Instruments (TI).
TI is a multinational semiconductor company that designs and manufactures analog, mixed-signal and embedded processors, power-management devices (including MOSFETs and other discrete power products), and related integrated circuits for industrial, automotive, consumer and communications markets.

Application

Typical applications for CSD19538Q3AT:
- Automotive power management: high-side/low-side load switches in 12V systems
- DC–DC converters: main switching FETs in buck/boost regulators
- Motor/actuator drives: pumps, fans, small DC motors
- Power distribution and protection in infotainment, lighting, and body electronics
- General high-speed switching in portable/industrial power supplies

Equivalent

I don’t have live web access to fetch exact cross‑references. Give me the CSD19538Q3AT’s key specs (VDS, RDS(on) at gate voltage, package, ID, and switching charge) or allow me to look it up, and I’ll list compatible equivalents (TI siblings and third‑party MOSFETs) concisely.

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