CSD19537Q3

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CSD19537Q3

MOSFET N-CH 100V 9.7A/50A 8VSON

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  • Mfr. Parte #CSD19537Q3
  • Paquete PowerTDFN-8
  • Hoja de datos
  • En stock5848

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 50A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 14.5mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3.6V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1680 pF @ 50 V
PowerDissipation(Max) 2.8W (Ta), 83W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON (3.3x3.3)

Descripción general

Description

CSD19537Q3 typically refers to a specific course or module identifier, potentially within a university or educational program. While the exact content may vary by institution, such courses often focus on topics related to Computer Science, Data Analysis, or Software Development.
An "Introduction to CSD19537Q3" would likely cover foundational concepts, methodologies, and tools relevant to the field. It may include programming fundamentals, data structures, algorithms, or software engineering principles, emphasizing hands-on learning and practical applications.
Students enrolled in this course would expect to gain essential skills and knowledge that prepare them for more advanced studies or careers in technology and computing. Assessments might involve coding assignments, projects, and examinations to evaluate understanding and proficiency in the subject matter.
For precise details, it's advisable to consult the specific course syllabus or institution's course catalog.

Features

The CSD19537Q3 is a high-performance power MOSFET designed for various applications, including DC-DC converters and power management systems. Key features include:
1. Low On-Resistance (RDS(on)): Ensures minimal power loss during operation, improving efficiency.
2. High Current Rating: Capable of handling significant current levels, suitable for demanding applications.
3. Fast Switching Speed: Reduces switching losses and enhances overall system performance.
4. Thermal Performance: Designed with an efficient thermal management system, enabling effective heat dissipation.
5. Voltage Rating: Operates at high voltage levels, making it suitable for various industrial applications.
6. Compact Package: Available in a QFN package, allowing for space-saving designs and easier integration into circuit boards.
These features make the CSD19537Q3 an ideal choice for applications requiring robust performance and high efficiency in power conversion and management.

Package

The CSD19537Q3 is packaged in a QFN (Quad Flat No-lead) format. This surface-mount package offers a compact design, efficient thermal performance, and low inductance, making it suitable for power management applications.

Pinout

The CSD19537Q3 is a power MOSFET from Texas Instruments, specifically designed for high-performance applications. It features a total of 8 pins. The key functions of these pins include:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The terminal where the current exits the MOSFET.
3. Source (S): The terminal where the current enters the MOSFET.
The pin configuration typically includes:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Source (S)
5. Drain (D)
6. Gate (G)
7. Drain (D)
8. Source (S)
The CSD19537Q3 is designed for applications such as synchronous buck converters and offers low RDS(on) and fast switching speeds, making it suitable for efficient power management. It is packaged in a compact 8-pin DPAK format for ease of integration into various electronic circuits.

Manufacturer

The CSD19537Q3 is manufactured by Texas Instruments (TI), a leading global semiconductor company. Founded in 1930, Texas Instruments is headquartered in Dallas, Texas, and specializes in designing and manufacturing a wide range of electronic components, including analog and embedded processing chips. TI is well-known for its innovation in analog and digital signal processing technologies, serving various markets such as automotive, industrial, communications, and consumer electronics. The CSD19537Q3 is a power MOSFET, commonly used in power management applications to improve energy efficiency in electronic devices.

Application

The CSD19537Q3 is a high-performance MOSFET primarily used in power management applications, including DC-DC converters, synchronous rectification, and battery management systems. Its low RDS(on) and fast switching capabilities make it suitable for efficient power delivery in consumer electronics, automotive systems, and industrial applications. Additionally, it is often utilized in renewable energy systems and electric vehicles for optimal energy conversion and management.

Equivalent

The CSD19537Q3 is a N-channel MOSFET used in power applications. Equivalent products include the CSD19538Q3, CSD19536Q3, and other similar N-channel MOSFETs from manufacturers such as Infineon, Vishay, and ON Semiconductor. For exact equivalents, consider parameters like voltage, current ratings, RDS(on), and package type. Always refer to the datasheets for specific applications to ensure compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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