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CSD17579Q5A
MOSFET N-CH 30V 25A 8VSON
- Fabricante
- Mfr. Parte #CSD17579Q5A
- Paquete PowerTDFN-8
- Hoja de datos
- En stock6549
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 25A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9.7mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15.1 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1030 pF @ 15 V |
| PowerDissipation(Max) | 3.1W (Ta), 36W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
Descripción general
Description
Key attributes include high switching frequencies, enabling compact design, and various packaging options to suit different thermal and space requirements. Additionally, it may support multiple input and output voltage configurations, making it versatile for diverse applications.
Overall, CSD17579Q5A represents a significant advancement in power management technology, offering features that cater to the growing demands for energy efficiency and performance in modern electronic systems.
Features
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
- On-Resistance (R_DS(on)): The device offers a low on-resistance of approximately 5.3 mΩ at V_GS of 10V, which enhances efficiency and minimizes power losses during operation.
- Current Handling: It can handle continuous drain currents of up to 70A, ensuring robust performance in demanding applications.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy drive with logic-level signals.
- Package: It comes in a compact QFN package, facilitating easy integration into space-constrained designs.
- Thermal Performance: The device is designed for efficient thermal dissipation, making it suitable for high-performance applications.
Overall, the CSD17579Q5A is an efficient and versatile choice for power management solutions in various electronic devices.
Package
Pinout
1. Gate (G): Controls the MOSFET's operation; the voltage applied here determines whether the device is on or off.
2. Drain (D): The terminal through which current exits the MOSFET when it is on.
3. Source (S): The terminal through which current enters the MOSFET when it is on.
4. D2 (D): Another drain connection; used for specific configurations in applications.
5. S2 (S): Another source connection; similarly, this is for enhanced design flexibility.
This device is typically used in power management applications due to its low on-resistance and high current handling capabilities.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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