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CSD17577Q3AT
MOSFET N-CH 30V 35A 8VSON
- Fabricante
- Mfr. Parte #CSD17577Q3AT
- Paquete
- Hoja de datos CSD17577Q3AT DataSheet
- En stock7259
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Especificaciones
| Supplier | Texas Instruments,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4.8mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2310 pF @ 15 V |
| PowerDissipation(Max) | 2.8W (Ta), 53W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (3x3.3) |
Descripción general
Description
This MOSFET typically operates at high voltages, enabling it to handle demanding electrical environments. Its construction allows for thermal efficiency, which is crucial in reducing heat generation during operation. Additionally, the CSD17577Q3AT is packaged in a compact format, allowing for space-saving designs in electronic circuits.
When selecting this MOSFET for a design, consider its maximum ratings, such as gate-source voltage, drain-source voltage, and continuous drain current, to ensure optimal performance and reliability in your specific application.
Features
1. Low RDS(on): Offers minimal on-resistance, which enhances efficiency and reduces heat generation during operation.
2. High Voltage Rating: Operates at a maximum drain-source voltage of 30V, making it suitable for various applications.
3. Fast Switching Speed: Enables quick turn-on and turn-off times, beneficial for high-frequency applications.
4. Compact Package: Housed in a QFN (Quad Flat No-lead) package, which aids in efficient thermal management and PCB space-saving.
5. Robust Thermal Performance: Designed to handle high power levels while maintaining reliable junction temperatures.
6. Low Gate Charge: Reduces the input power required for switching, enhancing overall system efficiency.
7. Ideal for DC-DC Converters: Commonly used in power management systems such as synchronous buck converters and other voltage regulation applications.
These features make the CSD17577Q3AT an excellent choice for modern electronic designs requiring high efficiency and compactness.
Package
Pinout
1. G (Gate): Controls the switching of the MOSFET.
2. D (Drain): The terminal through which current flows out when the MOSFET is on.
3. S (Source): The terminal through which current flows into the MOSFET when on.
4. R (Reverse Drain): Often used for additional functionality in specific configurations.
The other four pins are typically used for thermal and electrical performance parameters, including bulk capacitance and thermal management features. The device is designed for high efficiency in applications like power conversion and load switching. For detailed pin assignments and specific electrical characteristics, it is advisable to refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
Envío
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Payment Methods
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