CSD17510Q5A

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CSD17510Q5A

MOSFET N-CH 30V 20A/100A 8VSON

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Especificaciones

Supplier Texas Instruments
Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 20A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.2mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.3 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1250 pF @ 15 V
PowerDissipation(Max) 3W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (5x6)

Descripción general

Description

CSD17510Q5A is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching in consumer electronics, industrial systems, and renewable energy solutions. This particular model features a low on-resistance (R_ds(on)) which enhances efficiency and reduces heat generation during operation. With its high voltage and current ratings, the CSD17510Q5A is suitable for use in DC-DC converters, motor drivers, and power supply circuits.
The device is packaged in a compact surface-mount format, making it ideal for space-constrained designs. Its fast switching capabilities improve overall system performance while minimizing power loss. To ensure reliability, the MOSFET also includes robust thermal and electrical characteristics. Overall, the CSD17510Q5A is an excellent choice for engineers looking to optimize power efficiency and performance in their designs.

Features

The CSD17510Q5A is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power applications.

2. Current Capacity: The device can handle continuous drain current (I_D) up to 70A, making it ideal for high-current applications.
3. Low R_DS(on): It offers a low on-resistance of around 5.3 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes conduction losses.
4. Fast Switching: The device is optimized for fast switching speeds, enhancing efficiency in power converters and switch-mode power supplies.
5. Thermal Performance: It comes in a D2PAK package that provides effective thermal management, allowing for better heat dissipation.
6. Gate Threshold: The gate threshold voltage (V_GS(th)) is in the range of 1V to 3V, facilitating easy drive requirements.
These features make the CSD17510Q5A suitable for applications in power management, motor drives, and renewable energy systems.

Package

The CSD17510Q5A is packaged in a QFN (Quad Flat No-lead) format, specifically the 5mm x 6mm size. This package type offers a compact design with excellent thermal performance and is suitable for modern power management applications.

Pinout

The CSD17510Q5A is a N-channel MOSFET with a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where current flows out of the device.
3. Source (S): The input terminal where current flows into the device.
4. Body Diode (internal): Provides a path for current when the device is off, protecting against reverse polarity.
5. Thermal Pad (exposed): Used for heat dissipation to manage thermal performance.
This device is commonly used in power management applications due to its low on-resistance and high efficiency.

Manufacturer

The CSD17510Q5A is manufactured by Texas Instruments (TI), a leading global semiconductor company. Texas Instruments designs and produces a wide range of electronic components, including analog and embedded processing chips. Founded in 1930, the company is well-known for its innovation in the semiconductor industry, particularly in the fields of microcontrollers, digital signal processors, and power management solutions. TI serves various markets, including automotive, industrial, and consumer electronics, and is recognized for its commitment to providing high-quality, reliable products to engineers and designers worldwide.

Application

The CSD17510Q5A is a N-channel MOSFET commonly used in power management applications. Its primary application areas include DC-DC converters, synchronous rectification, battery management systems, and electric vehicles. It is also suitable for power supply circuits, industrial automation, and renewable energy systems due to its efficient switching performance and low on-resistance.

Equivalent

The CSD17510Q5A is a N-channel MOSFET. Equivalent products include the following:
1. BSC090N15NS3
2. IRF3205
3. STP75NF75
4. AON7540
Ensure to check specifications like VDS, ID, RDS(on), and package type to confirm compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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