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CSD17310Q5A
MOSFET N-CH 30V 21A/100A 8VSON
- Fabricante
- Mfr. Parte #CSD17310Q5A
- Paquete PowerTDFN-8
- Hoja de datos
- En stock6962
100% original & Nuevo
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Garantía de 365 días
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 3V, 8V |
| RdsOn(Max)@IdVgs | 5.1mOhm @ 20A, 8V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11.6 nC @ 4.5 V |
| Vgs(Max) | +10V, -8V |
| InputCapacitance(Ciss)(Max)@Vds | 1560 pF @ 15 V |
| PowerDissipation(Max) | 3.1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
Descripción general
Description
Key specifications typically include a high voltage rating, low gate charge, and thermal resistance parameters that enhance its performance in demanding environments. The device's compact package design allows for efficient integration into circuit layouts, optimizing space and thermal management.
Overall, the CSD17310Q5A is ideal for engineers seeking robust solutions for energy-efficient power regulation and switching applications.
Features
1. Low On-Resistance: It offers a low R_DS(on) of 5.5 mΩ, which helps minimize conduction losses.
2. High Voltage Rating: The device supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various applications.
3. Fast Switching Speed: With a low gate charge (Q_g), it enables quicker switching times, improving overall efficiency in high-frequency applications.
4. Thermal Performance: It has a thermal resistance rating of 35°C/W, which aids in effective heat dissipation during operation.
5. Compact Package: Housed in a 5x6 mm DPAK package, it offers a compact solution for space-constrained designs.
These features make the CSD17310Q5A ideal for applications such as DC-DC converters, synchronous rectification, and other power management solutions in consumer and industrial electronics.
Package
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The terminal through which current flows out of the device.
3. Source (S): The terminal through which current flows into the device.
4. Source (S): There are two source pins for better current handling.
5. Drain (D): Similar to source, there are two drain pins to enhance performance.
This MOSFET is designed for high efficiency in power management applications, featuring low on-resistance and fast switching capabilities.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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