CSD17305Q5A

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CSD17305Q5A

MOSFET N-CH 30V 29A/100A 8VSON

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Especificaciones

Supplier Texas Instruments
Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 29A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 3V, 8V
RdsOn(Max)@IdVgs 3.4mOhm @ 30A, 8V
Vgs(th)(Max)@Id 1.6V @ 250µA
GateCharge(Qg)(Max)@Vgs 18.3 nC @ 4.5 V
Vgs(Max) +10V, -8V
InputCapacitance(Ciss)(Max)@Vds 2600 pF @ 15 V
PowerDissipation(Max) 3.1W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (5x6)

Descripción general

Description

CSD17305Q5A is a Texas Instruments NexFET power MOSFET (N-channel) used for high‑efficiency switching applications.
Key points:
- Rating: typically around 30 V drain–source.
- On resistance: very low (single‑digit milliohms range, typ at VGS ≈ 4.5 V; exact numbers in the datasheet).
- Drive: optimized for low gate charge for fast switching.
- Packaging: compact surface‑mount package (family variants; check the datasheet for exact package type).
- Applications: synchronous buck DC–DC converters, load switches, hot‑swap/bower rails, battery management, automotive-grade designs.
Note: For precise specifications (Rds(on), Vth, Qgs/Qgd, thermal metrics, and package details), refer to the TI CSD17305Q5A datasheet and product page.

Features

- N-channel enhancement-mode NexFET power MOSFET
- VDS = 30 V; very low RDS(on) (typical a few milliohms) at VGS = 4.5 V
- Logic-level gate drive optimized for 4.5 V operation
- Low gate charge and input capacitance for fast switching and high efficiency
- High pulsed current capability; suitable for switching power supplies
- Small footprint in a 6-pin SON/X2SON package
- Pb-free and RoHS compliant
- Robust body diode with fast reverse recovery for synchronous rectification and load switching
- Designed for compact, high-density DC-DC converters and similar applications

Package

CSD17305Q5A uses a 6‑pin WSON (Small Outline No-Lead) package, typically 2×3 mm with an exposed pad.

Pinout

CSD17305Q5A is an 8‑pin package (7 peripheral pins plus the large exposed pad). Function: an N‑channel enhancement‑mode power MOSFET for low RDS(on) switching. Typical pin roles are Gate (single control pin), multiple Source pins, multiple Drain pins plus the exposed drain pad (for power/current and thermal dissipation). Used for synchronous rectification, load switching and power‑conversion applications.

Manufacturer

Manufacturer: Texas Instruments (TI).
What kind of company: Texas Instruments is an American multinational semiconductor company (headquartered in Dallas, Texas) that designs and manufactures analog and embedded processing ICs and power-management devices, including MOSFETs and other discrete power products.

Application

CSD17305Q5A is a NexFET N-channel power MOSFET optimized for high‑efficiency switching power designs. Common application areas:
- DC‑DC converters and switching regulators (buck/boost/buck‑boost)
- Point‑of‑load (POL) regulators
- Load switches and power distribution networks
- Motor drive and general power switching
- Automotive and consumer electronics requiring efficient, fast switching MOSFETs

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