CAS120M12BM2

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CAS120M12BM2

MOSFET 2N-CH 1200V 193A MODULE

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Especificaciones

Supplier Wolfspeed, Inc.
Package Bulk
Series Z-Rec®
ProductStatus Not For New Designs
FETType 2 N-Channel (Half Bridge)
FETFeature Silicon Carbide (SiC)
DraintoSourceVoltage(Vdss) 1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C 193A (Tc)
RdsOn(Max)@IdVgs 16mOhm @ 120A, 20V
Vgs(th)(Max)@Id 2.6V @ 6mA (Typ)
GateCharge(Qg)(Max)@Vgs 378nC @ 20V
InputCapacitance(Ciss)(Max)@Vds 6470pF @ 800V
Power-Max 925W
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Chassis Mount
Package/Case Module

Descripción general

Description

CAS120M12BM2 is a type of composite material, specifically a carbon fiber-reinforced polymer (CFRP), designed for applications requiring high strength-to-weight ratios. It typically consists of carbon fibers embedded in a polymer matrix, which enhances its mechanical properties, making it suitable for aerospace, automotive, and sporting goods industries.
The designation "M12" often indicates specific dimensions or characteristics, while "BM2" might refer to a particular grade or manufacturing process. This material combines lightweight attributes with exceptional tensile strength, corrosion resistance, and durability, making it ideal for structures and components that endure significant stress and strain.
In summary, CAS120M12BM2 embodies advanced engineering design, enabling innovations that demand both performance and efficiency in challenging environments.

Features

The CAS120M12BM2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module commonly used in power electronics applications such as motor drives, renewable energy systems, and industrial power supplies. Key features include:
1. Voltage Rating: Typically rated for 1200V, suitable for medium-voltage applications.
2. Current Rating: Designed to handle high currents, often up to 120A.
3. Low On-State Voltage: Provides efficient operation with reduced power losses.
4. High Switching Speed: Enables faster switching for improved efficiency and reduced thermal stress.
5. Thermal Management: Features robust thermal characteristics, often with built-in heat sinks for better heat dissipation.
6. Compact Design: Space-saving module design suitable for various applications.
7. Reliable Performance: Enhanced ruggedness and longevity under operational stresses.
These features make the CAS120M12BM2 ideal for applications that require efficient power conversion and management.

Package

The CAS120M12BM2 is packaged in a DPAK (TO-252) format. This package type is commonly used for power semiconductor devices, providing efficient thermal performance and compact size suitable for various applications.

Pinout

The CAS120M12BM2 is a IGBT module with a pin count of 12. It is designed for medium voltage applications and features a combination of insulated gate bipolar transistors (IGBTs) and diodes. The main functions of the pins include:
1. Gate Control: Pins for controlling the gate of the IGBTs for switching operations.
2. Collector Connections: Pins for connecting to the collector terminals of the IGBTs.
3. Emitter Connections: Pins for connecting to the emitter terminals of the IGBTs.
4. Thermal Management: Some pins may also provide thermal sensing or monitoring functions.
This module is commonly used in applications such as inverters, motor drives, and power supplies due to its efficiency and high-performance characteristics. Always refer to the specific datasheet for detailed pin configurations and electrical characteristics.

Manufacturer

The manufacturer of the CAS120M12BM2 is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in the production of semiconductors and system solutions for various applications, including automotive, industrial, and communication sectors. The company focuses on power management, automotive electronics, security technologies, and microcontrollers, aiming to provide innovative solutions that enhance energy efficiency and connectivity. Infineon is recognized for its commitment to sustainability and advancing technologies that contribute to a greener and more connected world.

Application

The CAS120M12BM2 is an IGBT (Insulated Gate Bipolar Transistor) module primarily used in industrial applications such as motor drives, renewable energy systems (like solar inverters), and power supplies. Its high efficiency and thermal performance make it suitable for applications requiring high power handling, including industrial automation, electric vehicles, and traction systems.

Equivalent

The CAS120M12BM2 chip is a 1200V, 12A IGBT module. Equivalent products include:
1. Infineon FZ1200R12KE3
2. Mitsubishi CM120DY-12NF
3. Semikron SKM120GB128D
4. ON Semiconductor MBR1200-12
Ensure to check specific datasheets for detailed specifications and compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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