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C3M0075120D
SICFET N-CH 1200V 30A TO247-3
- Fabricante
- Mfr. Parte #C3M0075120D
- Paquete
- Hoja de datos
- En stock274
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Especificaciones
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Vgs (Max) | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 1000 V |
| Power Dissipation (Max) | 113.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | C3M0075120 |
Descripción general
Description
Features
1. Input Voltage Range: Typically supports a wide input voltage range, ensuring compatibility with various power sources.
2. Output Options: Provides multiple output voltages, allowing for flexible power supply configurations.
3. High Efficiency: Designed to minimize power loss, enhancing battery life in portable devices.
4. Low Quiescent Current: Reduces power consumption during standby, ideal for battery-powered applications.
5. Thermal Protection: Integrated thermal shutdown functionality prevents damage due to overheating.
6. Small Form Factor: Compact package size suitable for space-constrained designs.
7. Multiple Protection Features: Includes over-voltage, under-voltage, and short-circuit protection for enhanced reliability.
These features make the C3M0075120D suitable for applications like smartphones, tablets, and IoT devices, where efficient and reliable power management is critical.
Package
Pinout
- Voltage Rating: 1200V
- Current Rating: Up to 7.5A
- Low On-Resistance: Reduces conduction losses
The pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load and receives the output current.
3. Source (S): Connects to the ground or negative side of the circuit.
4. Body Diode (integrated): Allows current to flow when the MOSFET is off, providing a path for inductive loads.
This device is widely used in applications like power supplies, inverters, and motor drives due to its excellent thermal performance and efficiency.
Manufacturer
Application
Equivalent
1. C3M0075120K (Cree)
2. SCT3060 (SCT)
3. STP12S120 (STMicroelectronics)
4. MPSM120 (MPS)
5. FGA25N120 (Fairchild)
Always check specific datasheets for exact specifications and compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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