BSZ440N10NS3 G

Las imágenes son solo para referencia

BSZ440N10NS3 G

MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Packaging MouseReel
Standard Pack Qty 5000

Descripción general

Description

The BSZ440N10NS3 G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features low on-resistance, high-speed switching capabilities, and high voltage ratings, making it ideal for power management in various electronic devices. With a maximum drain-source voltage of 100V and a continuous drain current of 44A, it is suitable for applications such as power supplies, motor drives, and DC-DC converters.
The device is housed in a TO-220 package, facilitating effective heat dissipation, which enhances reliability in demanding environments. Its low gate threshold voltage allows for efficient control with minimal power loss. The BSZ440N10NS3 G is often used in automotive, industrial, and consumer electronics sectors due to its robustness and efficiency.
In summary, this MOSFET is a reliable choice for engineers seeking to optimize performance and efficiency in power electronic circuits.

Features

The BSZ440N10NS3 G is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 100V maximum drain-source voltage (Vds), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of up to 44A, making it suitable for power management.
3. RDS(on): Low on-resistance (typically around 10 mΩ at Vgs = 10V), which minimizes conduction losses.
4. Gate Threshold Voltage: Gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for quick switching applications, optimizing efficiency in converters and inverters.
7. Applications: Commonly used in power supplies, motor drives, and other high-frequency applications.
These features make the BSZ440N10NS3 G a reliable choice for various electronic designs requiring efficient power management.

Package

The BSZ440N10NS3 G is packaged in a TO-220 form factor. This package type is commonly used for power transistors and ensures efficient thermal dissipation and robust electrical performance.

Pinout

The BSZ440N10NS3 G is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. Applying a voltage to this pin allows current to flow between the drain and source.

2. Drain (D): This is where the current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin connects to the ground or negative side of the circuit. Current enters the MOSFET through this pin when it is switched on.
The BSZ440N10NS3 G is designed for high-speed switching applications and features low on-resistance, making it suitable for power management in various electronic devices.

Manufacturer

The BSZ440N10NS3 G is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing discrete, logic, and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) components. The company is known for its high-performance semiconductor solutions, focusing on efficiency and reliability. Nexperia was formed when NXP Semiconductors divested its standard products division in 2017, and it has since positioned itself as a leader in the production of essential components for various applications, including automotive, industrial, and consumer electronics. The BSZ440N10NS3 G is specifically a N-channel MOSFET designed for high-efficiency power management applications.

Application

The BSZ440N10NS3 G is a power MOSFET commonly used in various applications, including DC-DC converters, switch-mode power supplies, motor drives, and power management systems. Its high efficiency and fast switching capabilities make it suitable for consumer electronics, renewable energy systems, and electric vehicles. Additionally, it can be used in high-frequency applications due to its low gate charge and low on-resistance characteristics.

Equivalent

The BSZ440N10NS3 G is an N-channel MOSFET. Equivalent products include the IRF440, STP40NF10, and BUK445-100. Make sure to verify specifications such as voltage, current rating, and threshold voltage to ensure compatibility for your application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar