BSZ160N10NS3G

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BSZ160N10NS3G

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  • Mfr. Parte #BSZ160N10NS3G
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  • En stock6501

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Especificaciones

Manufacturer Infineon Technologies
Package TSDSON-8(3.3x3.3)
RDS(on) 16mΩ@10V,20A
Drain to Source Voltage 100V
Pd - Power Dissipation 2.1W
Current - Continuous Drain(Id) 8A
Type 1 N-channel
Gate Threshold Voltage (Vgs(th)@Id) 3.5V

Descripción general

Description

The BSZ160N10NS3G is a high-performance N-channel MOSFET designed for efficient power management applications. It features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) rating of 160A, making it suitable for high-power switching applications. The device has a low on-resistance (RDS(on)) of approximately 10 mΩ, which minimizes power loss and improves thermal performance.
This MOSFET is housed in a TO-220 package, allowing for easy heat dissipation and mounting on PCBs. It is commonly used in applications such as DC-DC converters, motor drives, and other power conversion systems where efficiency, reliability, and thermal performance are critical.
With its fast switching capabilities and robust specifications, the BSZ160N10NS3G is an ideal choice for designers looking to optimize power efficiency and minimize heat generation in their circuits.

Features

The BSZ160N10NS3G is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 100V, suitable for various power applications.
2. Current Rating: 160A continuous drain current, capable of handling significant load.
3. RDS(on): Very low on-resistance (typically around 10 mΩ), ensuring minimal power loss during operation.
4. Fast Switching: High-speed switching capabilities, which improve efficiency in applications like power supplies and motor drives.
5. Package Type: HSOF-8 package, offering excellent thermal performance and compact design.
6. Gate Threshold Voltage: Low gate threshold voltage range facilitates easy driving with minimal gate drive voltage.
7. Operating Temperature: Suitable for high-temperature applications, with a maximum junction temperature of 175°C.
These features make the BSZ160N10NS3G ideal for use in automotive, industrial, and consumer electronic applications where reliability and efficiency are critical.

Package

The BSZ160N10NS3G is packaged in a TO-220 form factor. This package type is designed for power devices, offering good thermal performance and ease of mounting to heatsinks.

Pinout

The BSZ160N10NS3G is a N-channel MOSFET designed for high efficiency and fast switching applications. It has a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching state. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the main current enters the MOSFET. It connects to the load in the circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the negative side of the power supply.
The device is rated for a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 160A, making it suitable for various power management applications.

Manufacturer

The BSZ160N10NS3G is manufactured by Nexperia, a company that specializes in semiconductor components. Nexperia designs and produces a wide range of electronic parts including MOSFETs, diodes, and various discrete components, which are essential in various applications like automotive, industrial, and consumer electronics. The company is known for its high-efficiency products and focuses on delivering reliable and cost-effective solutions for customers in the global electronics market. Nexperia was established as a standalone company in 2017, following its spin-off from NXP Semiconductors.

Application

The BSZ160N10NS3G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, switching power supplies, and motor drives. Its high efficiency and low on-resistance make it suitable for renewable energy systems, electric vehicles, and high-frequency applications. Additionally, it can be utilized in industrial automation and consumer electronics for efficient power switching.

Equivalent

The BSZ160N10NS3G is a N-channel MOSFET by Infineon. Equivalent products include:
1. IRF160 - International Rectifier
2. FDP160N10 - Fairchild Semiconductor
3. STP160N10 - STMicroelectronics
4. PMPS160N10 - PSMC
Always check the datasheets for specific parameters like VDS, ID, RDS(on), and package compatibility to ensure suitability in your application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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