BSZ097N10NS5

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BSZ097N10NS5

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Especificaciones

Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 5000
Technology Si
REACH - SVHC Details
Mounting Style SMD/SMT
Package / Case TSDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 69 A
Rds On - Drain-Source Resistance 13 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.8 V
Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Single
Fall Time 5 ns
Height 1.1 mm
Length 3.3 mm
Rise Time 5 ns
Series OptiMOS 5
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 11 ns
Width 3.3 mm
Part # Aliases SP001132550 BSZ097N10NS5ATMA1
Unit Weight 0.003966 oz
Forward Transconductance - Min 23 S

Descripción general

Description

BSZ097N10NS5 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used in power applications. It features a low on-resistance, which helps enhance efficiency in switching applications. This particular MOSFET is designed to handle high voltages and currents, making it suitable for various uses in power supplies, motor drivers, and other high-performance electronic circuits.
Key specifications typically include maximum drain-source voltage, continuous drain current, and gate threshold voltage, which define its performance in circuits. The BSZ097N10NS5 is often integrated into circuit designs for applications requiring fast switching times and high reliability. Its package type, usually a TO-220 or similar, facilitates easy mounting on heatsinks for thermal management.
Overall, the BSZ097N10NS5 is valued for its efficiency, speed, and robustness, making it a popular choice among designers in the power electronics field.

Features

The BSZ097N10NS5 is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a breakdown voltage of 100V, making it suitable for high voltage applications.
2. Current Capability: The device can handle a continuous drain current of up to 97A, allowing it to manage significant power loads.
3. RDS(on): It features a low on-resistance of about 10 mΩ, which minimizes power loss during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from 2V to 4V, suitable for logic level operation.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching Speed: The BSZ097N10NS5 is designed for rapid switching applications, making it ideal for use in power supplies, converters, and motor drives.
Overall, this MOSFET is favored for its high efficiency, thermal performance, and robust electrical characteristics, making it a popular choice in various power electronic applications.

Package

The BSZ097N10NS5 is a N-channel MOSFET packaged in a TO-220 form factor. This package type is known for its good thermal performance and ease of handling in various electronic applications.

Pinout

The BSZ097N10NS5 is an N-channel MOSFET from Nexperia, designed for high-efficiency applications. It features a TO-220 package with a total of three pins.
The pinout and their functions are as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load. It is where the current exits the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is where the current enters the MOSFET.
The BSZ097N10NS5 is characterized by a low on-resistance (R_DS(on)), which contributes to its efficiency in power applications.

Manufacturer

The BSZ097N10NS5 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing a wide range of discrete and logic components, as well as MOSFETs, diodes, and amplifiers. The company focuses on providing high-quality and high-performance semiconductor solutions for various applications, including automotive, industrial, consumer, and telecommunications sectors. Nexperia is known for its commitment to reliability and efficiency in its products and plays a significant role in the semiconductor supply chain.

Application

The BSZ097N10NS5 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, and switching power supplies. It is suitable for automotive, industrial, and consumer electronics, providing efficient control in high-frequency switching and energy conversion tasks. Its low on-resistance and high-speed operation make it ideal for battery management systems and motor drivers as well.

Equivalent

The BSZ097N10NS5 is an N-channel MOSFET from Infineon. Equivalent products include the IRF3205, STP75NF10, and FQP75N10. When selecting an equivalent, ensure similar specifications like voltage rating, current handling, R_DS(on), and package type are matched for compatibility in your application. Always check datasheets for specific parameters before substituting.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

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