BSS84LT1G

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BSS84LT1G

MOSFET P-CH 50V 130MA SOT23-3

  • Fabricante
  • Mfr. Parte #BSS84LT1G
  • Paquete SOT23-3
  • Hoja de datos
  • En stock2909

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 50 V
Current-ContinuousDrain(Id)@25°C 130mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 10Ohm @ 100mA, 5V
Vgs(th)(Max)@Id 2V @ 250µA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 30 pF @ 5 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Descripción general

Description

BSS84LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 130mA. The device is known for its low on-resistance, which minimizes power loss and enhances efficiency in electronic circuits.
The BSS84LT1G is commonly used in switching applications, amplifiers, and signal processing due to its fast switching capabilities and ease of integration into various circuits. It comes in a compact SOT-23 package, facilitating space-saving designs.
Key specifications include a gate threshold voltage of 1-3V, making it suitable for operation with low control voltages. Its robustness and reliability make it a popular choice in consumer electronics, automotive, and industrial applications.
Overall, the BSS84LT1G is a versatile MOSFET that provides efficient performance for a range of electronic applications.

Features

The BSS84LT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is up to 170mA, making it suitable for various switching applications.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 3.5 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for efficient operation with lower control voltages.
5. Package: It comes in a compact SOT-23 package, which is advantageous for space-constrained designs.
6. Fast Switching: The device supports fast switching speeds, enhancing performance in high-frequency applications.
These features make the BSS84LT1G ideal for low-power switching and amplification in various electronic circuits.

Package

The BSS84LT1G is packaged in a SOT-23 (Small Outline Transistor) package type.

Pinout

The BSS84LT1G is a N-channel MOSFET with a total of three pins. Its pin configuration is as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET.
The BSS84LT1G is commonly used in low-power switching applications and signal processing. It has a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 0.25A. Its compact size and efficiency make it suitable for various electronic circuits, including low-power amplifiers and digital switching.

Manufacturer

The BSS84LT1G is manufactured by ON Semiconductor, a global technology company that specializes in semiconductor solutions. ON Semiconductor designs and produces a wide range of products, including power management, analog, and mixed-signal devices, as well as sensors and other components for various applications in automotive, industrial, and consumer electronics markets. The company is known for its focus on energy-efficient technologies and innovative solutions that enable smarter and more sustainable designs.

Application

The BSS84LT1G is an N-channel MOSFET primarily used in low-voltage applications such as power management, switching circuits, and signal routing. It is suitable for use in portable devices, battery management systems, and low-power electronic circuits due to its low on-resistance and efficient switching capabilities. Additionally, it can be utilized in LED drivers and as a general-purpose switch in various consumer electronics.

Equivalent

The BSS84LT1G is an N-channel MOSFET. Equivalent products include the 2N7000, 2N7002, and BS170. Additionally, you can consider the SI2301, SI2302, and FDG632P for similar applications. Always verify specifications such as voltage, current ratings, and threshold voltage to ensure compatibility.

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