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BSS806NH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
- Fabricante
- Mfr. Parte #BSS806NH6327XTSA1
- Paquete
- Hoja de datos BSS806NH6327XTSA1 DataSheet
- En stock23749
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Especificaciones
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 2.5V |
| RdsOn(Max)@IdVgs | 57mOhm @ 2.3A, 2.5V |
| Vgs(th)(Max)@Id | 750mV @ 11µA |
| GateCharge(Qg)(Max)@Vgs | 1.7 nC @ 2.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 529 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT23 |
Descripción general
Description
Key specifications typically include a maximum drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). The BSS806 is commonly used in applications such as power supplies, motor drivers, and other circuits requiring efficient power handling. It is packaged in a compact surface-mount format, allowing for easy integration into modern circuit designs.
This MOSFET is popular among engineers due to its reliability and performance, contributing to improved energy efficiency in consumer electronics, automotive systems, and industrial equipment. Always refer to the manufacturer's datasheet for detailed electrical characteristics and recommended operating conditions.
Features
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 60V, making it suitable for medium-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) rating of approximately 30A, allowing for significant power handling.
3. Low On-Resistance: With a low R_DS(on) value, it minimizes power loss and heat generation during operation, enhancing efficiency.
4. Fast Switching Speed: The device supports rapid switching, ideal for high-frequency applications.
5. Thermal Performance: It comes in a compact package that aids in efficient heat dissipation.
6. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is suitable for logic-level control, allowing easy interfacing with microcontrollers.
7. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heatsinking.
These characteristics make the BSS806NH6327XTSA1 an excellent choice for power management, motor control, and other electronic applications requiring efficient switching.
Package
Pinout
1. Gate (G) - Controls the MOSFET's operation; applying a voltage to this pin turns the device on or off.
2. Drain (D) - The pin through which the current flows out of the MOSFET when it is on.
3. Source (S) - The pin through which the current enters the MOSFET.
This device is commonly used in switching applications and power management due to its low on-resistance and high-speed switching capabilities.
Manufacturer
Application
Equivalent
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