BSS138PW,115

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BSS138PW,115

MOSFET N-CH 60V 320MA SOT323

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Especificaciones

Supplier Nexperia USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 320mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.6Ohm @ 300mA, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.8 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 50 pF @ 10 V
PowerDissipation(Max) 260mW (Ta), 830mW (Tc)
OperatingTemperature -55°C ~ 150°C (TA)
MountingType Surface Mount
SupplierDevicePackage SOT-323

Descripción general

Description

BSS138PW,115 is a variant of the BSS138 family: a small‑signal N‑channel MOSFET in a PW (SOT‑23 style) package. It’s commonly used as a low‑voltage switch and for bidirectional level shifting in microcontroller circuits (e.g., I2C level shifters).
Key points:
- Type: N‑channel enhancement MOSFET
- Package: PW (SOT‑23)
- Typical usage: switching loads and signaling; bidirectional level shifting
- Electrical hints (family level): Vds in the tens of volts, Id in the hundreds of milliamps, gate threshold around ~1 V to a few volts, Rds(on) a few ohms at Vgs ≈ 4.5 V
- Pinout: standard SOT‑23 layout (Gate, Drain, Source); verify in datasheet for the exact orientation
- suffix “-115” is likely a date/lot or packaging revision; it usually does not change the electrical characteristics
For precise values, consult the specific BSS138PW,115 datasheet from the manufacturer or distributor.

Features

Here are typical features for BSS138PW (SOT-23, logic-level N-channel MOSFET):
- N-channel enhancement-mode MOSFET
- VDS: around 50 V
- ID (continuous): ~0.2 A (small-signal device)
- RDS(on): ~3.5 Ω at VGS = 4.5 V; ~7 Ω at VGS = 2.5 V
- Gate threshold (VGS(th)): ~0.6–1.0 V
- Package: SOT-23 (PW variant), RoHS/lead-free
- Fast switching suitable for level shifting and small-signal switching
- Suitable for general-purpose switching and level-shifting applications
Notes:
- Exact numbers can vary slightly by lot; check the specific datasheet for your lot/marking.

Package

BSS138PW,115 is the BSS138 N-channel MOSFET in a SOT-23 (3-lead) surface-mount package; the “,115” suffix denotes tape-and-reel packaging.

Pinout

BSS138PW,115 is a 6‑pin device (SOT‑563/SC‑88 style package) containing two independent N‑channel enhancement‑mode MOSFETs. Each FET has the usual three terminals (gate, drain, source) brought out to the package pins for low‑voltage switching, level‑shifting and load‑switch applications.

Manufacturer

Manufacturer: onsemi (formerly ON Semiconductor).
What kind of company: onsemi is a global semiconductor company that designs and manufactures discrete and integrated semiconductor devices—power and analog ICs, MOSFETs, sensors and custom semiconductor solutions for automotive, industrial, cloud power, and consumer markets.

Application

BSS138PW,115 is a small N‑channel logic‑level MOSFET (SOT‑23 PW package). Typical application areas include:
- Low‑side switching of small loads in 3.3V/5V MCU systems
- Voltage-domain level shifting, e.g., bidirectional I2C/GPIO level shifters
- Fast, compact switching elements in PWM, protection, and power‑management circuits
- General‑purpose MOSFET replacement in tight, space‑constrained signal paths
(Note: use per your circuit requirements and datasheet specs.)

Equivalent

Equivalent replacements for a BSS138PW,115 (small‑signal N‑channel MOSFET) include: BSS138 (other manufacturers), 2N7002, IRLML2502, Si2302 (Si2302/Si2303 family), FDV301N. Check package, pinout and RDS(on)/Vth specs to ensure drop‑in compatibility for your board.

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