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BSS127H6327XTSA2
MOSFET N-CH 600V 21MA SOT23-3
- Fabricante
- Mfr. Parte #BSS127H6327XTSA2
- Paquete
- Hoja de datos BSS127H6327XTSA2 DataSheet
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Especificaciones
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 21mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 16mA, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 8µA |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 28 pF @ 25 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | BSS127 |
Descripción general
Description
Key specifications typically include a maximum drain-source voltage (Vds), continuous drain current (Id), and gate threshold voltage (Vgs(th)). The BSS127 features a TO-92 package, making it suitable for through-hole mounting in PCB designs. Its compact size and efficiency make it a popular choice in consumer electronics, automotive applications, and industrial systems.
When integrating this MOSFET into a circuit, proper thermal management and drive voltage considerations are crucial for optimal performance. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.
Features
- Voltage Rating: Typically supports a drain-source voltage (Vds) of up to 60V.
- Current Rating: Capable of handling continuous drain currents up to around 1.5A.
- RDS(on): Low on-resistance, typically around 0.8 ohms, improving efficiency by reducing heat generation.
- Gate Threshold Voltage (Vgs(th)): Usually ranges between 1V to 3V, allowing for effective operation at low gate voltages.
- Package: Available in a compact SOT-23 package, ensuring efficient use of PCB space.
- Fast Switching: Optimized for rapid switching applications, suitable for driving loads in power management and signal switching.
- Thermal Resistance: Good thermal performance allows for reliable operation in various environments.
This MOSFET is ideal for applications in power management, battery-powered devices, and general-purpose switching tasks.
Package
Pinout
1. Gate (G): This pin controls the MOSFET’s operation, turning it on or off by applying a voltage.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the entry point for current into the MOSFET.
Typically, the BSS127 is used in low-voltage applications and can handle up to 60V with a maximum continuous drain current of about 1.5A. It is commonly employed in switching applications, such as in power management and signal amplification.
Manufacturer
Application
Equivalent
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