BSP135H6327

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BSP135H6327

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  • Mfr. Parte #BSP135H6327
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Especificaciones

Manufacturer Infineon Technologies
Package SOT-223-4
Operating Temperature -55℃~+150℃
RDS(on) 60Ω@10V,0.12A
Drain to Source Voltage 600V
Pd - Power Dissipation 1.8W
Current - Continuous Drain(Id) 120mA
Reverse Transfer Capacitance (Crss@Vds) 5.1pF
Gate Charge(Qg) 4.9nC@3V
Number 1 N-channel
Input Capacitance(Ciss) 146pF@3V

Descripción general

Description

BSP135H6327 is a part number for a specific N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in electronic circuits for switching and amplification. This particular MOSFET is known for its low on-resistance, high-speed switching capabilities, and suitability for various applications including power management, signal processing, and motor control. The "H6327" part of the designation might indicate a specific packaging or version of the device.
As an N-channel MOSFET, the BSP135 allows current to flow from the drain to the source when a sufficient positive voltage is applied to its gate terminal. It is often preferred in low-voltage applications due to its efficient performance and reliability. Design engineers leverage this component in creating efficient, compact, and cost-effective circuits in consumer electronics, automotive systems, and industrial equipment. For detailed specifications, such as maximum voltage, current ratings, and thermal characteristics, referring to the manufacturer's datasheet is essential.

Features

The BSP135H6327 is a N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The continuous drain current (I_D) is around 5.3A at a specified temperature, allowing it to handle significant loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, enabling easy drive with standard logic levels.
5. Package: It comes in a compact SOT-23 package, facilitating easy integration into various circuit designs.
6. Fast Switching: The device is optimized for fast switching, suitable for applications like DC-DC converters and motor control.
Overall, the BSP135H6327 is ideal for efficient power management solutions in consumer electronics and industrial applications.

Package

The BSP135H6327 is typically packaged in a SOT-223 surface-mount package. This compact package type is designed for efficient thermal performance and ease of soldering on PCBs, suitable for various electronic applications.

Pinout

The BSP135H6327 is a N-channel MOSFET packaged in a SOT-23 envelope, which typically features a 3-pin configuration. The pinout for the BSP135 is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): The drain pin is where the load connects. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): The source pin is connected to ground or the lower potential side of the load.
In summary, the BSP135H6327 has a 3-pin configuration: Gate, Drain, and Source, functioning as a switch to control electrical current in various applications.

Manufacturer

The BSP135H6327 is manufactured by Nexperia, a global semiconductor company that specializes in discrete and analog semiconductor devices. Nexperia was established as a spin-off from NXP Semiconductors in 2017 and focuses on providing high-volume, high-quality semiconductor products, including transistors, diodes, and integrated circuits. The company serves various markets, including automotive, industrial, and consumer electronics, emphasizing reliability and efficiency in their component designs. Nexperia is known for its commitment to sustainable manufacturing practices and innovation in semiconductor technology.

Application

The BSP135H6327 is a N-channel MOSFET used primarily in low-voltage applications. Its application areas include switching power supplies, motor control, and general-purpose switching tasks. It is suitable for use in power management circuits, LED drivers, and automotive electronics due to its low on-resistance and high-speed switching capabilities.

Equivalent

The BSP135H6327 is an N-channel MOSFET. Equivalent products include the BS170, 2N7000, and BSS138. Verify specifications like voltage rating, current rating, and package type for compatibility in your application.

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