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BSM25GD120DN2
IGBT Modules 1200V 25A FL BRIDGE
- Fabricante
- Mfr. Parte #BSM25GD120DN2
- Paquete
- Hoja de datos BSM25GD120DN2 DataSheet
- En stock3081
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Especificaciones
| Packaging | Tray |
| Standard Pack Qty | 10 |
Descripción general
Description
Key characteristics include low on-resistance, high thermal conductivity, and excellent thermal stability, which enable the device to operate effectively at elevated temperatures. The BSM25GD120DN2 is particularly useful in applications such as renewable energy systems (like solar inverters), electric vehicle charging, and energy storage systems.
Its robust construction and reliability make it a preferred choice for engineers looking to improve the efficiency and performance of their power electronics designs.
Features
1. Voltage Rating: 1200V, suitable for medium voltage applications.
2. Current Rating: 25A, optimized for industrial drives and power converters.
3. Low On-State Voltage: Ensures efficient operation and reduced power losses.
4. Fast Switching Speed: Enhances performance in switching applications.
5. Thermal Performance: Features a robust thermal design for effective heat dissipation.
6. Integrated Diodes: Built-in freewheeling diodes provide efficient reverse recovery.
7. Compact Design: Facilitates easy integration into various systems.
8. Reliability: Designed for long operational life in demanding environments.
This module is ideal for applications like motor drives, renewable energy systems, and other power electronics requiring efficient control.
Package
Pinout
1. Gate (G): Controls the switching of the device.
2. Source (S): Connected to the source terminal of the MOSFET.
3. Drain (D): Connected to the drain terminal where the load is attached.
4. Thermal pad (T): Used for heat dissipation.
The BSM25GD120DN2 is designed for high-efficiency power applications, especially in the automotive and industrial sectors, such as inverters and converters. Its SiC technology enables higher switching frequencies and better thermal performance compared to traditional silicon devices.
Manufacturer
Application
Equivalent
1. IGBT Modules:
- BSM25GD120DN1
- BSM25GD120D
- FZ1200R25KE3 (Infineon)
- CM200DY-24H (Mitsubishi)
Check datasheets for specifics on electrical characteristics to ensure compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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