BSC500N20NS3 G

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BSC500N20NS3 G

MOSFETs N-Ch 200V 24A TDSON-8

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Especificaciones

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Standard Pack Qty 5000

Descripción general

Description

The BSC500N20NS3 G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a low on-resistance and high-speed switching capabilities, making it suitable for use in various electronic circuits, including power supplies, motor drives, and other applications requiring efficient power management.
With a maximum drain-source voltage of 200V and a continuous drain current rating of 500A, the BSC500N20NS3 G is ideal for high-power applications. Its robust design ensures reliability under demanding conditions, while its low gate charge allows for faster switching speeds, contributing to overall system efficiency.
Additionally, the MOSFET is housed in a TO-220 package, facilitating effective heat dissipation for improved performance. Overall, the BSC500N20NS3 G serves as a crucial component in modern electronic designs, delivering performance and efficiency for power management solutions.

Features

The BSC500N20NS3 G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 500A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)), typically around 0.015 ohms, which reduces power loss and increases efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating compatibility with various gate drive circuits.
5. Package Type: It is typically housed in a TO-220 package, which aids in heat dissipation.
6. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like power supplies and converters.
Overall, the BSC500N20NS3 G is suitable for power management systems, automotive applications, and industrial power converters.

Package

The BSC500N20NS3 G is typically packaged in a TO-220 type package. This package provides efficient thermal management and is suitable for power applications.

Pinout

The BSC500N20NS3 G is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency applications. It has a total of 8 pins, which serve the following functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which current flows into the MOSFET.
The specific pin configuration is crucial for correct circuit implementation, typically including:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Additional pins may be used for thermal management or other functionalities, depending on the package type.
The BSC500N20NS3 G is optimized for applications such as power converters and motor drivers, offering low on-resistance and high-speed switching capabilities. Always refer to the manufacturer's datasheet for detailed pinout information and specifications.

Manufacturer

The manufacturer of the BSC500N20NS3 G is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security technologies. Infineon serves various markets such as automotive, industrial automation, consumer electronics, and telecommunications, focusing on innovation and sustainability in its product offerings.

Application

The BSC500N20NS3 G is a high-performance MOSFET commonly used in applications such as power supplies, motor drives, and DC-DC converters. Its features make it suitable for energy-efficient designs in automotive, industrial, and consumer electronics. Additionally, it is ideal for applications requiring high-speed switching and low conduction losses, enhancing overall system reliability and performance.

Equivalent

The BSC500N20NS3 G is an N-channel MOSFET. Equivalent products include the Infineon IPP200N20N3, Vishay SiHF500N20T, and Nexperia PSMN2R8-40BS. Always verify specifications such as voltage, current, Rds(on), and package type before substitution.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

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