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BSC190N15NS3G
- Fabricante
- Mfr. Parte #BSC190N15NS3G
- Paquete
- Hoja de datos
- En stock4459
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Especificaciones
| Manufacturer | Infineon Technologies |
| Package | TDSON-8(5.2x5.9) |
| Operating Temperature | -55℃~+150℃ |
| RDS(on) | 19mΩ@10V,50A |
| Drain to Source Voltage | 150V |
| Pd - Power Dissipation | 125W |
| Current - Continuous Drain(Id) | 50A |
| Reverse Transfer Capacitance (Crss@Vds) | 285pF@75V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Gate Charge(Qg) | 31nC@10V |
| Input Capacitance(Ciss) | 2.42nF@75V |
Descripción general
Description
Students engage in lectures, discussions, and laboratory work to enhance their understanding of biological systems. The curriculum may also include contemporary issues in biology, such as biotechnology, environmental conservation, and health sciences. Overall, BSC190N15NS3G aims to provide a solid foundation for further studies in biology and related fields, promoting an appreciation for the complexity of life and the importance of biological research.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 190A, enabling it to manage substantial power loads.
3. Low On-Resistance: It offers a low R_DS(on) value, typically around 0.015 ohms, which reduces power loss during operation.
4. Fast Switching: The MOSFET supports high-speed switching, making it ideal for applications like power converters and inverters.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature of 175°C, ensuring reliability in demanding environments.
6. Package: Available in a TO-220 package, it allows for easy mounting and good heat dissipation.
These characteristics make the BSC190N15NS3G suitable for various applications, including automotive, industrial, and consumer electronics.
Package
Pinout
1. Gate (G): Controls the MOSFET's operation by applying a voltage to enable or disable current flow between the drain and source.
2. Drain (D): The terminal through which current exits the MOSFET; connects to the load.
3. Source (S): The terminal through which current enters the MOSFET; typically connected to ground or a lower potential.
4. Gate (G): Repeated for enhanced control; in multi-package types, it may refer to different gate structures but generally serves the same function.
5. Source (S): Similar to the above, indicating multiple sources in certain configurations.
The BSC190N15NS3G is designed for high-efficiency applications, with a low on-resistance and high current capacity, making it suitable for various power electronics tasks.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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