BSC12DN20NS3G

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BSC12DN20NS3G

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Especificaciones

Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 5000
Technology Si
REACH - SVHC Details
Mounting Style SMD/SMT
Package / Case TDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 11.3 A
Rds On - Drain-Source Resistance 108 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 8.7 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 50 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Single
Fall Time 3 ns
Height 1.27 mm
Length 5.9 mm
Rise Time 4 ns
Series OptiMOS 3
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 6 ns
Width 5.15 mm
Part # Aliases SP000781774 BSC12DN20NS3GATMA1
Unit Weight 0.004375 oz
Forward Transconductance - Min 6 S

Descripción general

Description

The BSC12DN20NS3G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various power applications. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 12A at a specified temperature. With low on-resistance (RDS(on)), it is suitable for efficient switching applications, minimizing power losses during operation.
This MOSFET is part of the Superjunction technology family, which enhances performance in terms of efficiency and thermal management. It is commonly used in power supply circuits, converters, and motor drives, among other applications. The device is housed in a TO-220 package, making it easy to mount on heatsinks for effective thermal dissipation.
Overall, the BSC12DN20NS3G is ideal for engineers seeking reliability and efficiency in their designs, particularly in high-voltage and high-current scenarios.

Features

The BSC12DN20NS3G is a N-channel MOSFET designed for various applications in power management. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 20V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 12A.
3. R_DS(on): Offers low on-resistance, typically around 12 mΩ, which enhances efficiency by reducing conduction losses.
4. Fast Switching: Designed for high-speed switching applications, making it suitable for switching power supplies and converters.
5. Thermal Performance: Equipped with a robust thermal performance, allowing operation at higher temperatures.
6. Package Type: Available in a compact DPAK package, facilitating easier thermal management and PCB layout.
7. Gate Threshold Voltage (V_GS): Has a low gate threshold voltage, enabling it to be driven by lower voltage levels.
These characteristics make the BSC12DN20NS3G ideal for applications in industrial automation, power supplies, and motor control.

Package

The BSC12DN20NS3G is packaged in a DPAK (TO-252) format. This package type is suitable for surface-mount applications and offers efficient thermal performance and compact size, making it ideal for power management in various electronic devices.

Pinout

The BSC12DN20NS3G is a N-channel MOSFET designed for power applications. It features a total of 5 pins. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
The specific pin arrangement may vary based on the package type (e.g., TO-220, DPAK), so it's important to refer to the datasheet for precise details.
The MOSFET is characterized by its low on-resistance, high-speed switching, and ability to handle significant current and voltage, making it suitable for applications in power management and DC-DC converters. Always consult the manufacturer's datasheet for detailed electrical characteristics and thermal performance.

Manufacturer

The BSC12DN20NS3G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and communication sectors. Founded in 1999, the company focuses on innovations in power management, automotive systems, and IoT applications, contributing to advancements in energy efficiency and connectivity. Infineon is known for its commitment to sustainability and technology leadership in the semiconductor industry.

Application

The BSC12DN20NS3G is a N-channel MOSFET primarily used in power management applications, such as DC-DC converters, motor drives, and power supplies. Its low on-resistance and fast switching capabilities make it suitable for automotive applications, industrial automation, and consumer electronics. Additionally, it can be utilized in low-voltage applications and for load switching in various electronic circuits.

Equivalent

The BSC12DN20NS3G is an N-channel MOSFET. Equivalent products include the IRF3205, STP12NM60N, and FQPF20N20L. For direct replacements, consider checking the specific on-resistance (Rds(on)), voltage ratings, and package types to ensure compatibility in your application. Always verify specifications against your circuit requirements before substitution.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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